ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RA03M8087M
BLOCK DIAGRAM 23 RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO
DESCRIPTION
The RA03M8087M is a 3.6-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 806to 870-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=7.2V, VGG=0V)
• Pout>3.6W @ VDD=7.2V, VGG=3.5V, Pin=50mW
• ηT>32% @ Pout=3W (VGG control), VDD=7.2V, Pin=50mW • Broadband Frequency Range: 806-870MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V • Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power.
1451 RF Input (Pin) 2 Gate Voltage (VGG), Power Control3 Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 RF Ground (Case) PACKAGE CODE: H46S RoHS COMPLIANT
• RA03M8087M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking. • This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER RA03M8087M-101
SUPPLY FORM Antistatic tray, 25 modules/tray
RA03M8087M
MITSUBISHI ELECTRIC
1/8
24 Jan 2006
元器件交易网www.cecb2b.comELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANT
RA03M8087M
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER VDDVGGPinPoutTcase(OP)Tstg
Drain Voltage Gate Voltage Input Power Output Power
Operation Case Temperature Range Storage Temperature Range
CONDITIONS
RATING
UNIT
VGG<3.5V 9.2 V f=806-870MHz, ZG=ZL=50Ω
70 mW-30 to +90 -40 to +110
°C °C
VDD<7.2V, Pin=0mW 4 V 5 W The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified) SYMBOL PARAMETER f Frequency Range PoutηT2foρinIGG
Output Power Total Efficiency 2 Harmonic Input VSWR Gate Current
nd
CONDITIONS
VDD=7.2V,VGG=3.5V, Pin=50mW Pout=3W (VGG control),
VDD=7.2V, Pin=50mW
VDD=4.0-9.2V, Pin=25-70mW, Pout<5W (VGG control), Load VSWR=4:1
VDD=9.2V, Pin=50mW, Pout=3.6W (VGG control), Load VSWR=20:1
MIN TYP MAXUNIT
806 870 MHz3.6 W 32
-30
% dBc
4:1 — 1 mA No parasitic oscillationNo degradation or destroy
— —
— Stability —
Load VSWR Tolerance
All parameters, conditions, ratings, and limits are subject to change without notice.
RA03M8087M
MITSUBISHI ELECTRIC
2/8
24 Jan 2006
元器件交易网www.cecb2b.comELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANT
RA03M8087M
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
880
770
Pout @VGG=3.5V660
550
ηT @Pout=3.0W 440 VDD=7.2V330
Pin=50mW
220
ρin @Pout=3.0W
110
00
790800810820830840850860870880
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN andOUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWERDRAIN CURRENT versus INPUT POWER
505 505
PoutPout404404
Gp Gp303303
202202 IDDf=806MHz,IDD f=838MHz,101101VDD=7.2V,=7.2V,VDD VGG=3.5VVGG=3.5V00 00-15-10-505101520-15-10-505101520
INPUT POWER Pin(dBm)INPUT POWER Pin(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
505
Pout404
Gp
303
202
IDD 101f=870MHz,V=7.2V,DD
VGG=3.5V00
-15-10-505101520
INPUT POWER Pin(dBm)
OUTPUT POWER Pout(W)DRAIN CURRENT IDD(A)TOTAL EFFICIENCYηT(%)INPUT VSWR ρin (-)OUTPUT POWERPout(dBm)POWER GAIN Gp(dB)OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
109876543210
2
5DRAIN CURRENT IDD(A)4
PoutDRAIN CURRENT IDD(A)OUTPUT POWERPout(dBm)POWER GAIN Gp(dB)OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
109876543210
2
5DRAIN CURRENT IDD(A)f=838MHz,VGG=3.5V,Pin=50mWOUTPUT POWER Pout(W)OUTPUT POWER Pout(W)f=806MHz,VGG=3.5V,Pin=50mWPout32
IDD10
3
45678DRAIN VOLTAGE VDD(V)
9
10
IDD3
45678DRAIN VOLTAGE VDD(V)
910
RA03M8087M
MITSUBISHI ELECTRIC
3/8
DRAIN CURRENT IDD(A)OUTPUT POWERPout(dBm)POWER GAIN Gp(dB)43210
24 Jan 2006
元器件交易网www.cecb2b.comELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANT
RA03M8087M
TYPICAL PERFORMANCE (Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
109876543210
2
5DRAIN CURRENT IDD(A)f=870MHz,VGG=3.5V,Pin=50mWPoutOUTPUT POWER Pout(W)432
IDD10
3
45678DRAIN VOLTAGE VDD(V)
9
10
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
8OUTPUT POWER Pout(W)765432101
1.522.533.5GATE VOLTAGE VGG(V)
40
IDDf=806MHz,VDD=7.2V,Pin=50mWOUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
4
OUTPUT POWER Pout(W)DRAIN CURRENT IDD(A)321
8765432101
1.522.533.5GATE VOLTAGE VGG(V)
40
IDDf=838MHz,VDD=7.2V,Pin=50mW4321DRAIN CURRENT IDD(A)PoutPoutOUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
8OUTPUT POWER Pout(W)765432101
1.522.533.5GATE VOLTAGE VGG(V)
40
IDDf=870MHz,VDD=7.2V,Pin=50mW4321DRAIN CURRENT IDD(A)PoutRA03M8087M
MITSUBISHI ELECTRIC
4/8
24 Jan 2006
元器件交易网www.cecb2b.comELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANT
RA03M8087M
OUTLINE DRAWING (mm)
30.0 ±0.2 (1.7) (4.4) 26.6 ±0.2 21.2 ±0.2 2-R1.5 ±0.1 3.0 ±0.2 10.0 ±0.2 6.0 ±0.2 6.0 ±0.2 Ø0.45 ±0.15 1 6.0 ±1 2 3 46.1 ±1 13.7 ±1 18.8 ±1 23.9 ±1 3.5 ±0.2 (5.4) 2.3 ±0.4 0.05 +0.04/-0(19.2) 1.5 ±0.2 3.0 ±0.2 1 RF Input (Pin) 2 Gate Voltage (VGG)3 Drain Voltage (VDD)4 RF Output (Pout) 5 RF Ground (Case) RA03M8087M
MITSUBISHI ELECTRIC
5/8
7.4 ±0.2 524 Jan 2006
元器件交易网www.cecb2b.comELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANT
RA03M8087M
TEST BLOCK DIAGRAM
Signal Pre- Attenuator Attenuator Generator amplifier C1, C2: 4700pF, 22uF in parallel
EQUIVALENT CIRCUIT 2 1
Power Meter 12DUT345Spectrum AnalyzerDirectional CouplerZG=50ΩZL=50Ω Directional Coupler AttenuatorPower MeterC1C2- +DC PowerSupply VGG+ -DC PowerSupply VDD1 RF Input (Pin) 2 Gate Voltage (VGG)3 Drain Voltage (VDD)4 RF Output (Pout) 5 RF Ground (Case) 345RA03M8087M
MITSUBISHI ELECTRIC
6/8
24 Jan 2006
元器件交易网www.cecb2b.comELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANT
RA03M8087M
PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION:
Construction:
This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the
substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection. Following conditions must be avoided:
a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion) c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichlorethylene) d) Frequent on/off switching that causes thermal expansion of the resin e) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required. Mounting:
Heat sink flatness must be less than 50 µm (a heat sink that is not flat or particles between module and heat sink may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws or later when thermal expansion forces are added).
A thermal compound between module and heat sink is recommended for low thermal contact resistance and to reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat sink. The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board. M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm.
Soldering and Defluxing:
This module is designed for manual soldering.
The lead (terminal) must be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second. Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause bubbles in the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At Pout=3W, VDD=7.2V and Pin=50mW each stage transistor operating conditions are:
IDD @ ηT=32%VDD Pout Rth(ch-case)Pin
Stage
(W) (W) (V) (°C/W) (A)
0.05 0.8 4.5 0.30 1st
7.2
2nd0.8 3.0 4.3 1.00 The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are:
Tch1 = Tcase + (7.2V x 0.30A – 0.8W + 0.05W) x 4.5°C/W = Tcase + 6.3 °C
= Tcase + 21.5 °C Tch2 = Tcase + (7.2V x 1.00A – 3.0W + 0.8W) x 4.3°C/W
For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient temperature Tair=60°C and Pout=3W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) - Pout + Pin ) of the heat sink, including the contact resistance, is: Rth(case-air) = (90°C - 60°C) / (3W/32% – 3W + 0.05W) = 4.67
When mounting the module with the thermal resistance of 4.67W, the channel temperature of each stage transistor is:
Tch1 = Tair + 36.3 °C Tch2 = Tair + 51.5 °C
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
RA03M8087M
MITSUBISHI ELECTRIC
7/8
24 Jan 2006
元器件交易网www.cecb2b.comELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANT
RA03M8087M
Output Power Control:
Depending on linearity, the following two methods are recommended to control the output power: a) Non-linear FM modulation: By the gate voltage (VGG).
When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB and only a small leakage current flows from the battery into the drain.
Around VGG=2.5V, the output power and drain current increases substantially.
Around VGG=3V (typical) to VGG=3.5V (maximum), the nominal output power becomes available. b) Linear AM modulation: By RF input power Pin.
The gate voltage is used to set the drain’s quiescent current for the required linearity. Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following may be checked: a) Do the bias decoupling capacitors have a low inductance pass to the case of the module? b) Is the load impedance ZL=50Ω? c) Is the source impedance ZG=50Ω?
Frequent on/off switching:
In base stations, frequent on/off switching can cause thermal expansion of the resin that coats the transistor chips and can result in reduced or no output power. The bond wires in the resin will break after long-term thermally induced mechanical stress.
Quality:
Mitsubishi Electric is not liable for failures resulting from base station operation time or operating conditions exceeding those of mobile radios.
This module technology results from more than 20 years of experience, field proven in tens of millions of mobile radios. Currently, most returned modules show failures such as ESD, substrate crack, and transistor burnout, which are caused by improper handling or exceeding recommended operating conditions. Few degradation failures are found.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur. Trouble with semiconductors may lead to personal injury, fire or propertydamage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material, or (iii) prevention against any malfunction ormishap.
RA03M8087M
MITSUBISHI ELECTRIC
8/8
24 Jan 2006
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