专利名称：Etching method and etching apparatus
therefor
发明人：Yasushi Gotoh,Tokuo Kure,Hiroshi
Kawakami,Masanori Katsuyama,KiyomiYagi,Hiromichi Enami
申请号：US08/136947申请日：19931018公开号：US05352324A公开日：19941004
摘要：Disclosed is an etching method and an apparatus for performing an etching byalternately and repeatedly switching an average thickness of an ion sheath and anaverage energy of etching ions between two different values. Since the etchantabsorption to the surface of an article to be etched and the etching by ions areeffectively performed, it is possible to reduce the influence of an aspect ratio on anetching depth, and hence to perform the etching with an equal depth even if the width ofthe opening is changed.
申请人：HITACHI, LTD.
代理机构：Fay, Sharpe, Beall, Fagan, Minnich & McKee
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