Semiconductor memory device capable of performing

专利名称：Semiconductor memory device capable of

performing page mode operation

发明人：Eun-Suk Kang,So-Hoe Kim申请号：US11316897申请日：20051227

公开号：US20060164910A1公开日：20060727

专利附图：

摘要：A semiconductor memory device adapted to perform a page mode operationcomprises a first address transition detector adapted generate a first clock signal upondetecting a transition of a start address, a second address transition detector adapted to

generate a second clock signal upon detecting transition of a lower bit of the startaddress and after the first clock signal is generated, and an address controller adaptedto sequentially increment the start address in response to a transition of the secondclock signal. The address controller sequentially accesses memory cells selected by thestart address and the incremented start address in response to a transition of the secondclock signal.

申请人：Eun-Suk Kang,So-Hoe Kim

地址：Suwon-si KR,Seoul KR

国籍：KR,KR

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