RF2333 PCBA资料

0Typical Applications

•Broadband, Low Noise Gain Blocks•IF or RF Buffer Amplifiers•Driver Stage for Power AmplifiersProduct Description

The RF2333 is a general purpose, low-cost RF amplifierIC. The device is manufactured on an advanced GalliumArsenide Heterojunction Bipolar Transistor (HBT) pro-cess, and has been designed for use as an easily-cas-cadable 50Ω gain block. Applications include IF and RFamplification in wireless voice and data communicationproducts operating in frequency bands up to 6000MHz.The device is self-contained with 50Ω input and outputimpedances and requires only two external DC biasingelements to operate as specified. The RF2333 is avail-able in a very small industry-standard SOT23-5 surfacemount package, enabling compact designs which con-serve board space.

1.60+ 0.010.4001GENERAL PURPOSE AMPLIFIER

•Final PA for Low Power Applications•Broadband Test Equipment

0.150.052.90+ 0.100.9502.80+ 0.203° MAX0° MIN0.45+ 0.100.1271.441.04Dimensions in mm.Optimum Technology Matching® Applied

Si BJTSi Bi-CMOSInGaP/HBT

!GaAs HBT

SiGe HBT

Package Style: SOT23-5

GaAs MESFETSi CMOSSiGe Bi-CMOS

GaN HEMT

Features

•DC to 6000MHz Operation

•Internally matched Input and Output•10dB Small Signal Gain•+34dBm Output IP3•+18.5dBm Output Power

GND1GND2RF IN35RF OUT•Good Gain Flatness

4GNDOrdering Information

RF2333

RF2333 PCBA

General Purpose Amplifier

Fully Assembled Evaluation Board

Functional Block Diagram

RF Micro Devices, Inc.7628 Thorndike Road

Greensboro, NC 27409, USATel (336) 664 1233Fax (336) 664 0454http://www.rfmd.com

Rev A9 0304144-265

RF2333

Absolute Maximum Ratings

Parameter

Input RF Power

Operating Ambient TemperatureStorage Temperature

Rating

+13-40 to +85-60 to +150

Unit

dBm°C°C

Caution! ESD sensitive device.

RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).

Parameter

Overall

Frequency Range3dB BandwidthGain

SpecificationMin.Typ.Max.

DC to 6000

611.21110.410.2109.28.3±0.48.21.7:11.7:1+34.5+18.517

Unit

MHzGHzdBdBdBdB

Condition

T=25°C, VD=5.5V, ICC=70mA

Gain FlatnessNoise FigureInput VSWROutput VSWROutput IP3Output P1dB

Reverse Isolation

dBdB

dBmdBmdB°C/W°Cyears

Thermal

ThetaJC 247Maximum Measured Junction 176

Temperature

Mean Time Between Failures350

Freq=100MHz

Freq=1000MHzFreq=2000MHzFreq=3000MHzFreq=4000MHzFreq=5000MHzFreq=6000MHz

100MHz to 2000MHzFreq=2000MHz

In a 50Ω system, DC to 4000MHzIn a 50Ω system, DC to 4000MHz

Freq=1000MHz±50kHz, PTONE=-10dBmFreq=1000MHzFreq=2000MHz

ICC=70mA, PDISS=368mW (See Note.)TAMB=+85°C, VPIN=5.26V

See Note.

With 22Ω bias resistorPower SupplyDevice Operating Voltage5.3VAt pin 5 with ICC=70mASupply Voltage6.9VAt evaluation board connector, ICC=70mAOperating Current70mASee note.

Note: Because of process variations from part to part, the current resulting from a fixed bias voltage will vary. As a result, caution should be used in designing fixed voltage bias circuits to ensure the worst case bias current does not exceed 70mA over all intended operating conditions.

4-266Rev A9 030414

RF2333

Pin123FunctionGNDGNDRFINDescriptionGround connection. For best performance, keep traces physically short and connect immediately to ground plane.Same as pin 1.RF input pin. This pin is NOT internally DC-blocked. A DC-blocking capacitor, suitable for the frequency of operation, should be used in most applications. DC coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instabil-ity.Same as pin 1.RF output and bias pin. Biasing is accomplished with an external series resistor and choke inductor to VCC. The resistor is selected to set the DC current into this pin to a desired level. The resistor value is deter-mined by the following equation: RF OUTInterface Schematic45GNDRFOUT(VSUPPLY–VDEVICE)R=------------------------------------------------------ICCCare should also be taken in the resistor selection to ensure that the current into the part never exceeds 70mA over the planned oper-ating temperature. This means that a resistor between the supply and this pin is always required, even if a supply near 5.5V is available, to provide DC feedback to prevent thermal runaway. Because DC is present on this pin, a DC-blocking capacitor, suitable for the frequency of operation, should be used in most applications. The supply side of the bias network should also be well bypassed.RF IN

Evaluation Board Schematic

P1123VCCGNDNC1C1100 pF234233X410-

P1-1R122 ΩL1100 nH5C2100 pFC3100 pFC41 µFVCCP1-150 Ω µstripJ2RF OUT

J1RF IN

50 Ω µstripRev A9 0304144-267

RF2333

Evaluation Board LayoutBoard Size 1.0” x 1.0”

Board Thickness 0.020”, Board Material R0-4003 Rogers

4-268Rev A9 030414

Gain versus Frequency Across Temperature

14.0

ICC = 70 mA-40°C13.026°C85°C12.0

11.0

)Bd( n10.0

iaG9.0

8.0

7.0

6.0

0.0

1.0

2.0

3.0

4.0

5.0

6.0

Frequency (GHz)

Output IP3 versus Frequency Across Temperature

38.00ICC = 70 mA-40°C36.00

26°C85°C)m34.00Bd( re32.00woP t30.00pecret28.00nI redr26.00O dr324.00

22.0020.00

0.10

0.69

1.28

1.87

2.46

3.05

3.64

4.23

4.82

5.41

6.00

Frequency (GHz)

Input VSWR versus Frequency Across Temperature

2.20

ICC = 70 mA-40°C26°C2.0085°C1.80RWS1.60

V1.401.201.00

0.10

0.69

1.28

1.87

2.46

3.05

3.64

4.23

4.82

5.41

6.00

Frequency (GHz)Rev A9 030414RF2333

Output P1dB versus Frequency Across Temperature

20.0

ICC = 70 mA-40°C19.026°C18.085°C17.0)mBd(16.0 rewo15.0P tup14.0tuO13.0

12.0

11.010.0

0.0

1.0

2.0

3.0

4.0

5.0

6.0

Frequency (GHz)

Noise Figure versus Frequency Across Temperature

12.00

ICC = 70 mA11.00

)10.00

Bd( erugi9.00

F esioN8.00

7.00

-40°C26°C85°C6.00

0.10

0.69

1.28

1.87

2.46

3.05

3.64

4.23

4.82

5.41

6.00

Frequency (GHz)

Output VSWR versus Frequency Across Temperature

2.20

ICC = 70 mA-40°C26°C2.00

85°C1.80

RWS1.60

V1.40

1.20

1.00

0.10

0.69

1.28

1.87

2.46

3.05

3.64

4.23

4.82

5.41

6.00

Frequency (GHz)

4-269

RF2333

Reverse Isolation versus Frequency Across

21.00

Temperature, ICC = 70 mA20.00

)Bd19.00

( noitalos18.00

I esreveR17.00

16.00

-40°C26°C85°C15.00

0.10

0.69

1.28

1.87

2.46

3.05

3.64

4.23

4.82

5.41

6.00

Frequency (GHz)

Current versus Voltage

(At Pin 5)

90.085.080.075.070.0

)Am( 65.0CCI60.055.050.0-40C25C45.085CVcc=6.9V40.0

4.9

5.0

5.1

5.2

5.3

5.4

5.5

5.6

5.7

VPIN (V)Junction Temperature versus Power Dissipated

220.00

(TAMBIENT = +85°C)200.00

)C°( 180.00

erutarepm160.00

eT noitcn140.00

uJ120.00

100.00

0.25

0.27

0.29

0.31

0.33

0.35

0.37

0.39

0.41

0.43

0.45

Power Dissipated (W)4-270Current versus Voltage at Evaluation Board Connector,

90.0RBIAS = 22 Ω85.0

80.075.070.0

)Am( 65.0CCI60.0

55.050.0-40C45.025C85C40.0

6.2

6.4

6.6

6.8

7.0

7.2

7.4VCC (V)

Power Dissipated versus Voltage at Pin 5

0.50

(TAMBIENT = +85°C)0.45

)W( de0.40

tapissiD re0.35

woP0.30

0.25

4.95

5.00

5.05

5.10

5.15

5.20

5.25

5.30

5.35

5.40

5.45

VPIN (V)

MTTF versus Junction Temperature

(60% Confidence Interval)1000000

100000

)sr10000

aeY( FTTM1000

100

10100

125

150

175

200

Junction Temperature (°C)

Rev A9 030414