元器件交易网www.cecb2b.com
BD246, BD246A, BD246B, BD246CPNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETERCollector-emitterbreakdown voltage
TEST CONDITIONS
BD246
V(BR)CEO
IC = -30 mA(see Note 5)VCE= -55 V
ICES
Collector-emittercut-off currentCollector cut-offcurrentEmitter cut-offcurrentForward currenttransfer ratioCollector-emittersaturation voltageBase-emittervoltage
Small signal forward current transfer ratioSmall signal forward current transfer ratio
VCE= -70 VVCE= -90 VVCE=-115 V
ICEOIEBO
VCE= -30 VVCE= -60 VVEB = -5 VVCE = -4 VVCE = -4 VVCE = -4 VIB = -0.3 AIB = -2.5 AVCE = -4 VVCE = -4 VVCE = -10 VVCE = -10 V
VBE=0VBE=0VBE=0VBE=0IB=0IB=0IC=0IC= -1AIC= -3AIC= -10AIC= -3AIC= -10AIC= -3 AIC= -10 AIC=-0.5AIC=-0.5A
(see Notes 5 and 6)(see Notes 5 and 6)f = 1 kHzf = 1 MHz
203
(see Notes 5 and 6)
40204
-1-4-1.6-3
VV
IB = 0
BD246ABD246BBD246CBD246BD246ABD246BBD246CBD246/246ABD246B/246C
MIN-45-60-80-100
-0.4-0.4-0.4-0.4-0.7-0.7-1
mAmAmAV
TYP
MAX
UNIT
hFE
VCE(sat)VBEhfe
|hfe|
NOTES:5.These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6.These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
RθJCRθJA
Junction to case thermal resistanceJunction to free air thermal resistance
MIN
TYP
MAX1.5642
UNIT°C/W°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
tontoff
†
TEST CONDITIONS †
IC = -1 AVBE(off) = 3.7 V
IB(on) = -0.1 ARL = 20 Ω
IB(off) = 0.1 Atp = 20 µs, dc ≤ 2%
MINTYP0.20.8
MAXUNITµsµs
Turn-on timeTurn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT INFORMATION
23元器件交易网www.cecb2b.com
元器件交易网www.cecb2b.com
BD246, BD246A, BD246B, BD246CPNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIASSAFE OPERATING AREA-100SAS634ACIC - Collector Current - A-10tp = 300 µs, d = 0.1 = 10%tp = 1 ms, d = 0.1 = 10%tp = 10 ms, d = 0.1 = 10%DC Operation-1·0-0·1BD246BD246ABD246BBD246C-10-100-1000-0·01-1·0VCE - Collector-Emitter Voltage - VFigure 4. THERMAL INFORMATION
MAXIMUM POWER DISSIPATIONvsCASE TEMPERATURE100Ptot - Maximum Power Dissipation - WTIS633AA8060402000255075100125150TC - Case Temperature - °CFigure 5. PRODUCT INFORMATION
45元器件交易网www.cecb2b.com
元器件交易网www.cecb2b.com
BD246, BD246A, BD246B, BD246CPNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue anysemiconductor product or service without notice, and advises its customers to verify, before placing orders, that theinformation being relied on is current.PI warrants performance of its semiconductor products to the specifications applicable at the time of sale inaccordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PIdeems necessary to support this warranty. Specific testing of all parameters of each device is not necessarilyperformed, except as mandated by government requirements.PI accepts no liability for applications assistance, customer product design, software performance, or infringementof patents or services described herein. Nor is any license, either express or implied, granted under any patentright, copyright, design right, or other intellectual property right of PI covering or relating to any combination,machine, or process in which such semiconductor products or services might be or are used.PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BESUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.Copyright © 1997, Power Innovations LimitedPRODUCT INFORMATION
6
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