2SA1837
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA1837
Unit: mm
Power Amplifier Applications
Driver Stage Amplifier Applications
• High transition frequency: fT = 70 MHz (typ.) • Complementary to 2SC4793
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power
dissipation
Junction temperature Storage temperature range
Ta = 25°C Tc = 25°C
VCBO VCEO VEBO IC IB PC
−230 V −230 V −5 V −1 A −0.1 A 2.0 20
W
JEDEC
― ―
Tj 150 °C JEITA Tstg
−55 to 150
°C
TOSHIBA 2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high Weight: 1.7 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
12006-11-09
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2SA1837 Electrical Characteristics (Tc = 25°C)
Characteristics Symbol Test Condition Min Typ. MaxUnit
Collector cut-off current Emitter cut-off current
Collector-emitter breakdown voltage DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO IEBO V (BR) CEO
hFE VCE (sat) VBE fT Cob
VCB = −230 V, IE = 0 VEB = −5 V, IC = 0 IC = −10 mA, IB = 0 VCE = −5 V, IC = −100 mA IC = −500 mA, IB = −50 mA VCE = −5 V, IC = −500 mA VCE = −10 V, IC = −100 mA VCB = −10 V, IC = 0, f = 1 MHz
― ― −230 100 ― ―
― ― ―
−1.0−1.0
μA μA
― V V V
― 320― ―
−1.5−1.0
― 70 ― MHz― 30 ― pF
Marking
A1837 Part No. (or abbreviation code)Lot No. A line indicates
lead (Pb)-free package or lead (Pb)-free finish.
22006-11-09
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2SA1837
IC – VCE
−1.0 −20 −10 −8 −1.0Common emitter VCE = −5 V IC – VBE
Collector current IC (A) −6 −0.6 −4 −0.4 IB = −2 mA−0.2 Common emitter Tc = 25°C 0 0 −2 −4 −6 −8 −10 Collector current IC (A) −0.8 −0.8−0.6Tc = 100°C25−25 −0.4−0.200−0.2−0.4−0.6−0.8 −1.0 −1.2 −1.4Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V)
hFE – IC
1000 500 300 Tc = 100°C 100 50 30 25 −25 −3
VCE (sat) – IC
Collector-emitter saturation voltage VCE (sat) (V) Common emitter VCE = −5 V Common emitter IC/IB = 10 −1−0.5−0.3 DC current gain hFE −0.1−0.05Tc = 100°C10 −0.03−2525−0.003 −0.01 −0.03 −0.1−0.3 −1 −3 Collector current IC (A)
−0.01−0.003−0.01−0.03−0.1 −0.3 −1 −3 Collector current IC (A)
Safe Operating Area
−5−3IC max (pulsed)*IC max (continuous) Collector current IC (A) fT – IC
500 300 Common emitter VCE = −10 V Tc = 25°C 1 ms* −1−0.5−0.310 ms* 100 ms* Transition frequency fT (MHz) DC operation100 50 30 −0.1−0.05−0.03*: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 10 −5 −10 −30 −100 −300 −1000−0.01−1 −3 −10 −30 −100 −300 Collector current IC (mA) Collector-emitter voltage VCE (V)
32006-11-09
元器件交易网www.cecb2b.com
2SA1837
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
20070701-EN
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
42006-11-09
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