专利名称：Structure and method for reducing floating
body effect of SOI MOSFETS
发明人：Qingqing Liang,Zhijiong Luo,Haizhou
Yin,Huilong Zhu
申请号：US14338876申请日：20140723公开号：US09059040B2公开日：20150616
专利附图：
摘要：The present invention generally relates to a semiconductor structure andmethod, and more specifically, to a structure and method for reducing floating body
effect of silicon on insulator (SOI) metal oxide semiconductor field effect transistors(MOSFETs). An integrated circuit (IC) structure includes an SOI substrate and at least oneMOSFET formed on the SOI substrate. Additionally, the IC structure includes an
asymmetrical source-drain junction in the at least one MOSFET by damaging a pn junctionto reduce floating body effects of the at least one MOSFET.
申请人：INTERNATIONAL BUSINESS MACHINES CORPORATION
地址：Armonk NY US
国籍：US
代理机构：Roberts Mlotkowski Safran & Cole, P.C.
代理人：Steven J. Meyers
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