2SD1383K_1资料

2SD1383K

Transistors

High-gain Amplifier Transistor (32V , 0.3A)

2SD1383K

zFeatures

1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD852.

zPackaging specifications

TypePackagehFEMarkingCodeBasic ordering unit (pieces)2SD1383KSMT3BW∗T1463000(1)Emitter(2)Base(3)CollectorEach lead has same dimensions(2)zExternal dimensions (Unit : mm)

2SD1383K2.90.4(3)1.62.81.10.8(1)0.950.951.90.15∗ Denotes hFE

C0.3Min.

zCircuit diagram BRBE 4kΩE : EmitterB : BaseC : CollectorE zAbsolute maximum ratings (Ta=25°C) ParameterCollector-base voltageCollector-emitter voltageEmitter-base voltageSymbolVCBOVCEOVEBOICPCTjTstgLimits403260.31.50.2150−55 to +150UnitV∗1VVA (DC)A (Pulse)∗2W°C°CCollector currentCollector power dissipationJunction temperatureStorage temperature∗1 RBE=0Ω∗2 Single pulse Pw=10ms zElectrical characteristics (Ta=25°C) ParameterCollector-base breakdown voltageCollector-emitter breakdown voltageEmitter-base breakdown voltageCollector cutoff currentEmitter cutoff currentDC current transfer ratioCollector-emitter saturation voltageTransition frequencyOutput capacitance∗1 Measured using pulse current.∗2 Transition frequency of the device. SymbolBVCBOBVCEOBVEBOICBOIEBOhFEVCE(sat)fTCobMin.40326−−5000−−−Typ.−−−−−−−2503Max.−−−11−1.5−−UnitVVVµAµA−VMHzpFConditionsIC=100µAIC= −1mA , RBE=0ΩIE=100µAVCB=24VVEB=4.5VVCE=5V, IC=0.1AIC=200mA, IB=0.4mA∗1VCE=5V, IE= −10mA, f=100MHz∗2VCB=10V, IE=0A, f=1MHz Rev.B 1/2

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2SD1383K

zElectrical characteristic curves

125Transistors

500VCE=6V100POWER DISSIPATION : PC/PCMax (%)COLLECTOR CURRENT : IC (mA)100200100Ta=25°CCOLLECTOR CURRENT : IC (mA)IB=10µATa=25°C 9µA8µA5075Ta= −55°C50201052Ta=100°C7µA6µA5µA4µA5025000255075100125150AMBIENT TEMPERATURE : Ta (°C)00.40.81.21.62.02.42.83.20013µA2345BASE TO EMITTER VOLTAGE : VBE (V)COLLECTOR TO EMITTER VOLTAGE : VCE (V)Fig.1 Power dissipation curvesFig.2 Ground emitter propagation characteristiscFig.3 Ground emitter output characteristics COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)Ta=25°C50000DC CURRENT GAIN : hFEDC CURRENT GAIN : hFEVCE=5VIC/IB=5002Ta= −55°C20000100005000200010005005102050100200VCE=3V5V1000005000020000100005000C0°10=Ta°C2510.5100°C25°CC−55°0.2500100020005102050100200500100020000.10.512510020050010002000COLLECTOR CURRENT : IC (mA)COLLECTOR CURRENT : IC (mA)COLLECTOR CURRENT : IC (mA)Fig.4 DC current gain vs. collector current ( Ι )Fig.5 DC current gain vs. collector current ( ΙΙ ) Fig.6 Collector-emitter saturation voltage vs. collector current EMITTER INPUT CAPACITANCE : Cib (pF)TRANSISION FREQUWNCY : fT (MHz)OUTPUT CAPACITANCE : Cob (pF)Ta=25°CVCE=6VTa=25°Cf=1MHzIE=0A2010500Ta=25°Cf=1MHzIE=0A2010520010055022−1−2−5−10−20−50−100125102050112510EMITTER CURRENT : IE (mA)COLLECTOR TO BASE VOLTAGE : VCB (V)EMITTER TO BASE VOLTAGE : VEB (V)Fig.7 Gain bandwidth product vs. emitter currentFig.8 Collector output capacitance vs. collector-base voltageFig.9 Emitter input capacitance vs. emitter-base voltage Rev.B 2/2

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Appendix

NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon actual use, therefore, please requestthat specifications to be separately delivered.Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuitsand deciding upon circuit constants in the set.Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of anythird party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices.Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer.Products listed in this document are no antiradiation design.The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys).Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.About Export Control Order in JapanProducts described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade ControlOrder in Japan.In case of export from Japan, please confirm if it applies to \"objective\" criteria or an \"informed\" (by MITI clause)on the basis of \"catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1