NEC'S 7.5 V UHF BAND
NE5511279A
RF POWER SILICON LD-MOS FET
FEATURES• HIGH OUTPUT POWER:
Pout = 40.0 dBm TYP., f = 900 MHz, VDS = 7.5 V, Pout = 40.5 dBm TYP., f = 460 MHz, VDS = 7.5 V, • HIGH POWER ADDED EFFICIENCY: ηadd = 48% TYP., f = 900 MHz, VDS = 7.5 V, ηadd = 50% TYP., f = 460 MHz, VDS = 7.5 V, • HIGH LINEAR GAIN: GL = 15.0 dB TYP., f = 900 MHz, VDS = 7.5 V, GL = 18.5 dB TYP., f = 460 MHz, VDS = 7.5 V, • SURFACE MOUNT PACKAGE: 5.7 x 5.7 x 1.1 mm MAX• SINGLE SUPPLY: VDS = 2.8 to 8.0 V
0.9±0.20.4±0.155.7 MAX.0.8 MAX.3.6±0.2OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 79A
(Bottom View)4.2 MAX.1.5±0.2Source
GateSource21001W 34.4 MAX.5.7 MAX.
APPLICATIONS
• UHF RADIO SYSTEMS• CELLULAR REPEATERS• TWO-WAY RADIOS• FRS/GMRS• FIXED WIRELESS
DESCRIPTION
NEC's NE5511279A is an N-Channel silicon power laterally dif fused MOSFET spe cial ly designed as the transmission power amplifi er for 7.5 V radio systems. Die are man u -fac tured us ing NEC's NEWMOS1 tech nol o gy and housed in a surface mount pack age. This device can deliver 40.0 dBm output power with 48% power added effi ciency at 900 MHz using a 7.5 V supply voltage.
ELECTRICAL CHARACTERISTICS (TA = 25°C)SYMBOLPoutIDηaddGLPoutIDηaddGLIGSSIDSSVthRthgmBVDSSPARAMETEROutput PowerDrain CurrentPower Added Effi ciencyLinear GainOutput PowerDrain CurrentPower Added Effi ciencyLinear GainGate to Source Leak CurrentDrain to Source Leakage Current (Zero Gate Voltage Drain Current)Gate Threshold VoltageThermal ResistanceTransconductanceDrain to Source Breakdown VoltageMIN38.5−42−−−−−−−1.0−−20TYP40.02.54815.040.52.755018.5−−1.552.324MAX−−−−−−−−1001002.0−−−UNITdBmA%dBdBmA%dBnAnAV°C/WSVTEST CONDITIONSf = 900 MHz, VDS = 7.5 V,Pin = 27 dBm,IDSQ = 400 mA (RF OFF)Pin = 5 dBmf = 460 MHz, VDS = 7.5 V,Pin = 25 dBm,IDSQ = 400 mA (RF OFF)Pin = 5 dBmVGS = 6.0 VVDS = 8.5 VVDS = 4.8 V, IDS = 1.5 mAChannel to CaseVDS = 3.5 V, IDS = 900 mAIDSS = 15 µANotes: DC performance is 100% tested. RF performance is tested on several samples per wafer. Wafer rejection criteria for standard devices is 1 reject for several samples.
0.2±0.1 0.8±0.15
1.0 MAX.DrainGateDrain0.6±0.15
California Eastern Laboratories元器件交易网www.cecb2b.com
NE5511279A
ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)
SYMBOLS PARAMETERS UNITS RATINGS VDS Drain Supply Voltage2 V 20.0 VGS Gate Supply Voltage V 6.0 ID Drain Current A 3.0 PTOT Total Power Dissipation W 20 TCH Channel Temperature °C 125 TSTG Storage Temperature °C -55 to +125Note:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. VDS must be used under 12 V on RF operation.
P.C.B. LAYOUT (Units in mm)
79A PACKAGE
4.01.7SourceGateDrain902...5115.0Through hole φ 0.2 × 330.50.56.1Note:
Use rosin or other material to prevent solder from penetrating through-holes.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
OUTPUT POWER, DRAIN CURRENT,
ηd, ηadd vs. INPUT POWER
45
5
f = 900 MHz
Pout
))A%(40
4( ) m100S)dDI%dB (adI DS
,tndη( tu35
3eηy, or75 Py,ncηrd
uce Cir,ne eefi cwifo30
crfi cE Pηadd
2u50fEd oet uSndp ioadtutrA D O251
nri25
earwDoP200
010
15
20
25
3035
Input Power,Pin (dBm)RECOMMENDED OPERATING LIMITS
SYMBOLS PARAMETERS UNITS TYP MAX VDS Drain to Source Voltage V 7.5 8.0 VGS Gate Supply Voltage V 2.0 3.0 IDS Drain Current1 A 2.5 3.0 PIN Input Power dBm 27 30 f = 900 MHz, VDS = 7.5 V
ORDERING INFORMATION
PART NUMBER QTY
NE5511279A-T1 • 12 mm wide embossed taping. • Gate pin faces the perforation side of the tape. • 1 Kpcs/Reel
NE5511279A-T1A • 12 mm wide embossed taping. • Gate pin faces the perforation side of the tape. • 5 Kpcs/Reel
OUTPUT POWER, DRAIN CURRENT,
ηd, ηadd vs. INPUT POWER
45
5
f = 460 MHz
Pout
))A%(( )40
4 S100
m)dBD%dI(a d, t(IDS
dη n tueηy, o35
r Pη3r75
d
y,ncu cer,Cie nweefi ciforc cEP30
u ηfiadd
250
fotuSEde p ndoitutad rA O251
ni25
DraerwDoP2000
10
15
20
25
3035
Input Power,Pin (dBm)
元器件交易网www.cecb2b.com
NE5511279A
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales offi ce.
Soldering MethodInfrared Refl ow
Soldering Conditions
Peak temperature (package surface temperature) : 260°C or below
Time at peak temperature : 10 seconds or lessTime at temperature of 220°C or higher : 60 seconds or less
Preheating time at 120 to 180°C : 120±30 secondsMaximum number of refl ow processes : 3 timesMaximum chlorine content of rosin fl ux (% mass) : 0.2%(Wt.) or belowPeak temperature (package surface temperature) Time at temperature of 200°C or higher Preheating time at 120 to 150°C Maximum number of refl ow processes Maximum chlorine content of rosin fl ux (% mass)
: 215°C or below
: 25 to 40 seconds: 30 to 60 seconds: 3 times
: 0.2%(Wt.) or below
Condition Symbol
IR260
VPSVP215
Wave Soldering
Peak temperature (molten solder temperature) : 260°C or belowTime at peak temperature : 10 seconds or lessPreheating temperature (package surface temperature) : 120°C or belowMaximum number of fl ow processes : 1 timeMaximum chlorine content of rosin fl ux (% mass) : 0.2%(Wt.) or belowPeak temperature (pin temperature) Soldering time (per pin of device) Maximum chlorine content of rosin fl ux (% mass)
: 350°C or below
: 3 seconds or less: 0.2%(Wt.) or below
WS260
Partial HeatingHS350-P3
Caution Do not use different soldering methods together (except for partial heating).
Life Support ApplicationsThese NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 08/26/2003A Business Partner of NEC Compound Semiconductor Devices, Ltd.
因篇幅问题不能全部显示，请点此查看更多更全内容