CMOS time delay and integration image sensor

专利名称：CMOS time delay and integration image

sensor

发明人：Naser Faramarzpour,Matthias Egbert

Sonder

申请号：US13592419申请日：20120823公开号：US08975570B2公开日：20150310

专利附图：

摘要：A CMOS time delay and integration image sensor is disclosed having analogsampling stages coupled to the column bus that correspond to a pixel in the column. The

analog sampling stages have a first memory element that stores the pixels reset levelsignal and a second memory element that stores an output signal of a previous analogsampling stage in the column. The analog sampling stage integrates the signal of theprevious analog sampling stage with the sampled photosignal of the corresponding pixeland subtracts the reset level. The analog sampling stage architecture provides globalshuttering and correlated double sampling and only requires a single analog to digitalconversion for each TDI line time.

申请人：Naser Faramarzpour,Matthias Egbert Sonder

地址：Kitchener CA,Waterloo CA

国籍：CA,CA

代理机构：Gowling Lafleur Henderson LLP

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