专利名称：GUARD RIND STRUCTURES AND METHOD
OF FABRICATING THEREOF
发明人：JOHN VICTOR D. VELIADIS,MEGAN J. SNOOK申请号：US12900308申请日：20101007
公开号：US20110042776A1公开日：20110224
专利附图：
摘要：A guard ring structure for use in a semiconductor device. The guard ringstructure includes a semiconductor layer stack having a first layer and a second layer ontop of the first layer, gates structures formed in the first layer; and guard rings formed in
the first layer. The second layer has a dopant concentration that is higher than thedopant concentration of the first layer. The gates and the guard rings are formedsimultaneously using a single mask.
申请人：JOHN VICTOR D. VELIADIS,MEGAN J. SNOOK
地址：HANOVER MD US,COLUMBIA MD US
国籍：US,US
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