Electrostatic discharge protection structures for

专利名称：Electrostatic discharge protection structures

for high speed technologies with mixed andultra-low voltage supplies

发明人：Markus Paul Josef Mergens,Cornelius

Christian Russ,John Armer,Koen GerardMaria Verhaege

申请号：US109383申请日：20040726公开号：US075944B2公开日：20090915

专利附图：

摘要：An electrostatic discharge (ESD) protection circuit in a semiconductor integratedcircuit (IC) having protected circuitry. In one embodiment, the ESD protection circuitincludes a pad adapted for connection to a first voltage source of a protected circuitnode of the IC, and a silicon controlled rectifier (SCR) having an anode adapted forcoupling to the first voltage source, and a cathode adapted for coupling to a secondvoltage source. At least one capacitive turn-on device respectively coupled between atleast one of a first gate of the SCR and the first voltage source, and a second gate of theSCR and the second voltage source.

申请人：Markus Paul Josef Mergens,Cornelius Christian Russ,John Armer,Koen GerardMaria Verhaege

地址：Ravensburg DE,Diedorf DE,Middlesex NJ US,Gistel BE

国籍：DE,DE,US,BE

代理机构：Lowenstein Sandler PC

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