18N50

FDA18N50

500V N-Channel MOSFETFeatures

•19A, 500V, RDS(on) = 0.265Ω @VGS = 10 V•Low gate charge ( typical 45 nC)•LowCrss ( typical 25 pF)•Fastswitching

•100% avalanche tested•Improved dv/dt capability

UniFET

Description

TM

These N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary, planarstripe, DMOS technology.

This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in the avalancheand commutation mode. These devices are well suited for highefficient switched mode power supplies and active power factorcorrection.

D

G

TO-3P

GDS

FDA Series

SAbsolute Maximum Ratings

Symbol

VDSSIDIDMVGSSEASIAREARdv/dtPDTJ, TSTGTL

Drain-Source VoltageDrain CurrentDrain CurrentGate-Source voltage

Single Pulsed Avalanche EnergyAvalanche Current

Repetitive Avalanche EnergyPeak Diode Recovery dv/dtPower Dissipation

(TC = 25°C)

- Derate above 25°C

(Note 2)(Note 1)(Note 1)(Note 3)

Parameter

- Continuous (TC = 25°C)- Continuous (TC = 100°C)- Pulsed

(Note 1)

FDA18N50

5001911.476±3094519234.52391.92-55 to +150

300

Unit

VAAAVmJAmJV/nsWW/°C°C°C

Operating and Storage Temperature RangeMaximum Lead Temperature for Soldering Purpose,1/8” from Case for 5 Seconds

Thermal Characteristics

Symbol

RθJCRθCSRθJA

Parameter

Thermal Resistance, Junction-to-CaseThermal Resistance, Case-to-Sink Typ.Thermal Resistance, Junction-to-Ambient

Min.

--0.24--

Max.

0.52--40

Unit

°C/W°C/W°C/W

©2006 Fairchild Semiconductor Corporation1www.fairchildsemi.com

FDA18N50 Rev. A

FDA18N50 500V N-Channel MOSFETPackage Marking and Ordering Information

Device Marking

FDA18N50

Device

FDA18N50

Package

TO-3PN

Reel Size

-

Tape Width

-

Quantity

30

Electrical Characteristics T = 25°C unless otherwise noted

C

Symbol

Off CharacteristicsBVDSS∆BVDSS/ ∆TJIDSSIGSSFIGSSRVGS(th)RDS(on)gFSCissCossCrsstd(on)trtd(off)tfQgQgsQgdISISMVSDtrrQrr

NOTES:

Parameter

Drain-Source Breakdown VoltageBreakdown Voltage Temperature Coefficient

Zero Gate Voltage Drain CurrentGate-Body Leakage Current, ForwardGate-Body Leakage Current, ReverseGate Threshold VoltageStatic Drain-SourceOn-Resistance

Forward TransconductanceInput CapacitanceOutput Capacitance

Reverse Transfer CapacitanceTurn-On Delay TimeTurn-On Rise TimeTurn-Off Delay TimeTurn-Off Fall TimeTotal Gate ChargeGate-Source ChargeGate-Drain Charge

Conditions

VGS = 0V, ID = 250µA

ID = 250µA, Referenced to 25°CVDS = 500V, VGS = 0VVDS = 400V, TC = 125°CVGS = 30V, VDS = 0VVGS = -30V, VDS = 0VVDS = VGS, ID = 250µAVGS = 10V, ID = 9.5AVDS = 40V, ID = 9.5AVDS = 25V, VGS = 0V,f = 1.0MHz

(Note 4)

Min.

500----------3.0----------

Typ.

--0.5----------0.220252200330255516595904512.519

MaxUnits

----110100-1005.00.265--28604304012034020019060----VV/°CµAµAnAnAVΩSpFpFpFnsnsnsnsnCnCnC

On Characteristics

Dynamic Characteristics

Switching Characteristics

VDD = 250V, ID = 19ARG = 25Ω

------(Note 4, 5)

--------

VDS = 400V, ID = 19AVGS = 10V

(Note 4, 5)

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward CurrentMaximum Pulsed Drain-Source Diode Forward CurrentDrain-Source Diode Forward VoltageReverse Recovery TimeReverse Recovery Charge

VGS = 0V, IS = 19A

VGS = 0V, IS = 19A

dIF/dt =100A/µs (Note 4)

----------------5005.4

19761.4----AAVnsµC

1. Repetitive Rating: Pulse width limited by maximum junction temperature2. L = 4.7mH, IAS = 19A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C3. ISD ≤ 19A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

FDA18N50 Rev. A

2www.fairchildsemi.com

FDA18N50 500V N-Channel MOSFETTypical Performance CharacteristicsFigure 1. On-Region Characteristics 102Figure 2. Transfer Characteristics 102ID, Drain Current [A]101ID, Drain Current [A] VGSTop : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 VBottom : 5.5 V 10025C-55C* Notes : 1. VDS = 40V 2. 250µs Pulse Testoo10-1* Notes : 1. 250µs Pulse Test 2. TC = 25C-1o1010010110024681012VDS, Drain-Source Voltage [V]VGS, Gate-Source Voltage [V]Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward VoltageDrain Current and Gate VoltageVariation vs. Source Current and Temperatue 102RDS(ON) [Ω], Drain-Source On-Resistance0.60.5VGS = 10V0.4IDR, Reverse Drain Current [A]1010.3VGS = 20V0.2* Note : TJ = 25Co 150oC25C0o* Notes : 1. VGS = 0V 2. 250µs Pulse Test0.10510152025303540455055606570100.20.40.60.81.01.21.41.61.82.02.22.4ID, Drain Current [A]VSD, Source-Drain voltage [V]Figure 5. Capacitance Characteristics 5000Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + CgdCrss = CgdFigure 6. Gate Charge Characteristics12VGS, Gate-Source Voltage [V]4000Coss10VDS = 100VVDS = 250VVDS = 400VCapacitances [pF]83000Ciss6 2000* Note : 1. VGS = 0 V 2. f = 1 MHz41000Crss2* Note : ID = 18A0-110100101001020304050VDS, Drain-Source Voltage [V]QG, Total Gate Charge [nC]FDA18N50 Rev. A

3www.fairchildsemi.com

101150CoFDA18N50 500V N-Channel MOSFETTypical Performance Characteristics (Continued)Figure 7. Breakdown Voltage Variationvs. Temperature 1.23.0Figure 8. On-Resistance Variation vs. Temperature BVDSS, (Normalized)Drain-Source Breakdown Voltage1.1RDS(ON), (Normalized)Drain-Source On-Resistance2.52.01.01.5 1.0* Notes : 1. VGS = 10 V 2. ID = 9.5 A0.9* Notes : 1. VGS = 0 V 2. ID = 250µA0.50.8-100-50050100o1502000.0-100-50050100o150200TJ, Junction Temperature [C]TJ, Junction Temperature [C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 20 10210 µs100 µsID, Drain Current [A]101100Operation in This Area is Limited by R DS(on)ID, Drain Current [A]1 ms10 ms100 msDC1510 10-1* Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulseoo510-21001011020255075100o125150VDS, Drain-Source Voltage [V]TC, Case Temperature [C] Figure 11. Transient Thermal Response Curve 100ZθJC(t), Thermal ResponseD=0.50.210-1PDM0.050.020.01* Notes : 1. ZθJC(t) = 0.52 C/WMax. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t)ot210-2single pulse10-510-410-310-210-1100101t1, Square Wave Pulse Duration [sec]FDA18N50 Rev. A

4

0.1t1www.fairchildsemi.com

FDA18N50 500V N-Channel MOSFET Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FDA18N50 Rev. A

5www.fairchildsemi.com

FDA18N50 500V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms

FDA18N50 Rev. A

6www.fairchildsemi.com

FDA18N50 500V N-Channel MOSFETMechanical Dimensions

FDA18N50 Rev. A

7www.fairchildsemi.com

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTSHEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THEAPPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDERITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’SWORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES ORSYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:

1. Life support devices or systems are devices or systems which,(a) are intended for surgical implant into the body, or (b) support orsustain life, or (c) whose failure to perform when properly used inaccordance with instructions for use provided in the labeling, can bereasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device orsystem whose failure to perform can be reasonably expected tocause the failure of the life support device or system, or to affect itssafety or effectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

Datasheet IdentificationAdvance Information

Product StatusFormative or In Design

Definition

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice to improvedesign.

This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice to improve design.

This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

PreliminaryFirst Production

No Identification NeededFull Production

ObsoleteNot In Production

Rev. I21