Fuse of semiconductor device and method for formin

专利名称：Fuse of semiconductor device and method

for forming the same

发明人：Chi Hwan Jang申请号：US137140申请日：20121218公开号：US08860175B2公开日：20141014

专利附图：

摘要：A fuse of a semiconductor device and a method for forming the same aredisclosed. The fuse includes a first metal line formed over a semiconductor substrate, asecond metal line spaced apart from the first metal line, and a contact fuses formed of a

metal contact coupled to the first metal line and the second metal line. Upper parts ofthe contact fuses overlap with each other, and lower parts are spaced apart from eachother. Since the fuse is formed of a metal contact, fuse oxidation and fuse movement canbe prevented. A conventional metal-contact fabrication process can be used, so thatmass production of semiconductor devices is possible. In addition, the fuse region isreduced in size, reducing production costs.

申请人：SK hynix Inc.

地址：Icheon-si KR

国籍：KR

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