专利名称：Plasma etch equipment
发明人：Siamak Salimian,Michelangelo Delfino,Bu-Chin Chung
申请号：US08/304719申请日：19940912公开号：US05587039A公开日：19961224
摘要：A microwave powered electron cyclotron resonance reactor employing a lowpressure, high electron density plasma for rapid oxide etching using hydrogen and argonincorporates an alumina-coated quartz dielectric microwave window to couple microwaveenergy into an etch chamber while preventing oxygen in the window from contaminatingthe etch chamber or its contents. The etch chamber side of the dielectric microwavewindow is coated with alumina.
申请人：VARIAN ASSOCIATES, INC.
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容