Ferroelectric memory and method for manufacturing

专利名称：Ferroelectric memory and method for

manufacturing same

发明人：Katsumi Sameshima申请号：US09451979申请日：19991130公开号：US06900486B1公开日：20050531

专利附图：

摘要：Ferroelectric memory includes a hollow formed in a first insulation film. A lowerelectrode is formed in this hollow by sol-gel method including an application process dueto a spin coat method. In this application process, a precursor solution is dripped on a

surface of the first insulation film and splashed away due to centrifugal force. Due to this,a first conductive film to being formed has an increased film thickness at portion of thehollow where the precursor solution is ready to correct, or portion to be formed into alower electrode, and a decreased film thickness at portion other than the hollow.Accordingly, it is satisfactory to etch only the hollow portion when forming a lowerelectrode by dry-etching the first conductive film.

申请人：Katsumi Sameshima

地址：Kyoto JP

国籍：JP

代理人：Gerald T. Bodner

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