Structure of metal interconnect and fabrication me

专利名称：Structure of metal interconnect and

fabrication method thereof

发明人：Pei-Yu Chou,Chun-Jen Huang申请号：US11748472申请日：20070514公开号：US07524742B2公开日：20090428

专利附图：

摘要：A process and structure for a metal interconnect includes providing a substratewith a first electric conductor, forming a first dielectric layer and a first patterned hardmask, using the first patterned hard mask to form a first opening and a second electric

conductor, forming a second dielectric layer and a second patterned hard mask, using thesecond patterned hard mask as an etching mask and using a first patterned hard mask asan etch stop layer to form a second opening and a third electric conductor.

申请人：Pei-Yu Chou,Chun-Jen Huang

地址：Taipei Hsien TW,Tainan Hsien TW

国籍：TW,TW

代理人：Winston Hsu

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