Method for producing a thin film, and a semiconduc

专利名称：Method for producing a thin film, and a

semiconductor device having the thin film

发明人：Shigemi Kohiki,Takayuki Negami,Mikihiko

Nishitani,Takahiro Wada

申请号：US08/309552申请日：19940920公开号：US05422304A公开日：19950606

摘要：Chalcopyrite compound semiconductor thin films represented by I-III-VI. sub.2-xV.sub.x or I-III-VI.sub.2-x VII.sub.x, and semiconductor devices having a I-III-VI.sub.2 /I-III-VI.sub.2-x V.sub.x or I-III-VI.sub.2 /I- III-VI.sub.2-x VII.sub.x chalcopyrite homojunction areprovided. Such chalcopyrite compound semiconductor thin films are produced byradiating molecular beams or ion beams of the I, III, VI, and V or VII group elementssimultaneously, or by doping I-III-VI.sub.2 chalcopyrite thin films with VII-group atomsafter the formation thereof. Pollution-free solar cells are also provided, which areformed by the steps of forming a structure of a lower electrode, a chalcopyrite

semiconductor thin film, and an upper electrode and radiating accelerated ion beams of aV, VII, or VIII group element thereto.

申请人：MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

代理机构：Renner, Otto, Boisselle & Sklar

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