METHODS TO FORM HIGH DENSITY THROUGH-MOLD INTERCON

专利名称：METHODS TO FORM HIGH DENSITY

THROUGH-MOLD INTERCONNECTIONS

发明人：KARHADE, Omkar, G.,DESHPANDE, Nitin

A.,CETEGEN, Edvin,LI, Eric, J.,MALLIK,Debendra,ZIADEH, Bassam M.

申请号：EP14901926.7申请日：20140915公开号：EP3195357A4公开日：20180523

摘要：Methods of fabricating a microelectronic device comprising forming a

microelectronic substrate having a plurality microelectronic device attachment bond padsand at least one interconnection bond pad formed in and/or on an active surface thereof,attaching a microelectronic device to the plurality of microelectronic device attachmentbond pads, forming a mold chase having a mold body and at least one projectionextending from the mold body, wherein the at least one projection includes at least onesidewall and a contact surface, contacting the mold chase projection contact surface to arespective microelectronic substrate interconnection bond pad, disposing a moldmaterial between the microelectronic substrate and the mold chase, and removing themold chase to form at least one interconnection via extending from a top surface of themold material to a respective microelectronic substrate interconnection bond pad.

申请人：Intel Corporation

地址：2200 Mission College Boulevard Santa Clara, CA 95054 US

国籍：US

代理机构：Rummler, Felix

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