Charge pump circuit having an improved charge pump

专利名称：Charge pump circuit having an improved

charge pumping efficiency

发明人：Yasuhiko Tsukikawa申请号：US08/045069申请日：19930412公开号：US05394365A公开日：19950228

摘要：A charge pump circuit includes a P channel field effect transistor, a diode-connected N channel field effect transistor between a first node and a second node. TheP channel field effect transistor operates in response to a first clock signal appliedthrough a first capacitor to discharge the first node to a ground potential. The first nodereceives a second clock signal through a second capacitor. Negative electric charges arepumped out to the second node. A negative bias voltage is generated from the secondnode with an improved efficiency and reliability.

申请人：MITSUBISHI DENKI KABUSHIKI KAISHA

代理机构：Lowe, Price, LeBlanc & Becker

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