MOSFET termination trench

专利名称：MOSFET termination trench发明人：Misbah Ul Azam,Kyle Terrill申请号：US13370243申请日：20120209公开号：US09614043B2公开日：20170404

专利附图：

摘要：A method, in one embodiment, can include forming a core trench and a

termination trench in a substrate. The termination trench is wider than the core trench. Inaddition, a first oxide can be deposited that fills the core trench and lines the sidewallsand bottom of the termination trench. A first polysilicon can be deposited into the

termination trench. A second oxide can be deposited above the first polysilicon. A maskcan be deposited above the second oxide and the termination trench. The first oxide canbe removed from the core trench. A third oxide can be deposited that lines the sidewallsand bottom of the core trench. The first oxide within the termination trench is thickerthan the third oxide within the core trench.

申请人：Misbah Ul Azam,Kyle Terrill

地址：Fremont CA US,Santa Clara CA US

国籍：US,US

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