FIN TUNNEL FIELD EFFECT TRANSISTOR (FET)

专利名称：FIN TUNNEL FIELD EFFECT TRANSISTOR

(FET)

发明人：Krishna Bhuwalka申请号：US15478198申请日：20170403

公开号：US20170207328A1公开日：20170720

专利附图：

摘要：A fin tunnel field effect transistor includes a seed region and a first type regiondisposed above the seed region. The first type region includes a first doping. The fintunnel field effect transistor includes a second type region disposed above the first type

region. The second type region includes a second doping that is opposite the firstdoping. The fin tunnel field effect transistor includes a gate insulator disposed above thesecond type region and a gate electrode disposed above the gate insulator. A methodfor forming an example fin tunnel field effect transistor is provided.

申请人：Taiwan Semiconductor Manufacturing Company Limited

地址：Hsin-Chu TW

国籍：TW

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