专利名称：Thin film transistor and display device using
the same
发明人：Isao Suzumura,Norihiro Uemura,Takeshi
Noda,Hidekazu Miyake,Yohei Yamaguchi
申请号：US14245102申请日：20140404公开号：US09391213B2公开日：20160712
专利附图：
摘要：In a bottom gate thin film transistor using a first oxide semiconductor layer as achannel layer, the first oxide semiconductor layer and second semiconductor layers
include In and O. An (O/In) ratio of the second oxide semiconductor layers is equal to orlarger than that of the first oxide semiconductor layer, and a film thickness thereof isthicker than that of the first oxide semiconductor layer.
申请人：Japan Display Inc.
地址：Tokyo JP
国籍：JP
代理机构：Ulmer & Berne LLP
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