Flash memory device and method of erasing

专利名称：Flash memory device and method of erasing发明人：Andrei Mihnea,Chun Chen,Paul

Rudeck,Andrew R. Bicksler

申请号：US09772667申请日：20010130公开号：US06563741B2公开日：20030513

专利附图：

摘要：A non-volatile memory device includes an improved method for erasing a blockof stack-gate single transistor flash memory cells. The memory performs an efficient andcontrollable mode of programming, referred to as block convergence. During an erase

operation, one or more electrical erase pulses of fixed number, duration and voltagewaveform are applied to memory cells in an addressable block of the memory devicearray. The erase pulse(s) fully erase all bits in the block. A block convergence operation isapplied simultaneously to all cells in the block. The block convergence operation bringsa threshold voltage of cells, which may have become over-erased during the eraseoperation, to a controlled level. A reverse-bias pulse, capable of inducing band-to-bandtunnelling across one junction in the structure of the flash memory cells, is applied to afirst junction. The other junction receives either a reverse bias or floating potential. Thememory can implement several biasing schemes while performing the block convergenceoperation.

申请人：MICRON TECHNOLOGY, INC.

代理机构：Leffert Jay & Polglaze P.A.

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