Self electrooptic effect device employing asymmetr

专利名称：Self electrooptic effect device employing

asymmetric quantum wells

发明人：Keith W. Goossen,David A. B. Miller申请号：US07/298591申请日：190117公开号：US04904859A公开日：19900227

摘要：Lower switching energies, enhanced electroabsorption and reduced toleranceson the operating wavelength of incident light are achieved while contrast between lowand high absorption states is maintained in accordance with the principles of the inventionby a self electrooptic device including an intrinsic quantum well region having anasymmetric electronic characteristic across a narrow bandgap subregion between thetwo wide bandgap layers defining the quantum well region. As a result, the quantum wellregion polarizes electrons and holes within the subregion in an opposite directionrelative to a direction for an electric field applied to the device. The asymmetric

electronic characteristic is realized as a compositionally graded, narrow bandgap layer oras a pair of coupled narrow bandgap layers of differing thicknesses separated by a thinwide bandgap layer.

申请人：AMERICAN TELEPHONE AND TELEGRAPH COMPANY,AT&T BELLLABORATORIES

代理人：Gregory C. Ranieri

更多信息请下载全文后查看