STP45N10FI资料

®STP45N10STP45N10FI

N - CHANNEL 100V - 0.027Ω - 45A - TO-220/TO-220FI

POWER MOS TRANSISTOR

TYPESTP45N10STP45N10FIVDSS100 V100 VRDS(on)< 0.035 Ω< 0.035 ΩID45 A24 Assssssss

TYPICAL RDS(on) = 0.027 Ω

AVALANCHE RUGGED TECHNOLOGY100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE

HIGH CURRENT CAPABILITY

175 oC OPERATING TEMPERATUREAPPLICATION ORIENTEDCHARACTERIZATION

123123TO-220 ISOWATT220APPLICATIONS sHIGH CURRENT, HIGH SPEED SWITCHINGsSOLENOID AND RELAY DRIVERSsDC-DC & DC-AC CONVERTERS

sAUTOMOTIVE ENVIRONMENT (INJECTION,ABS, AIR-BAG, LAMP DRIVERS. Etc.)

INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS

SymbolVDSVDGRVGSIDIDIDM(•)PtotVISOTstgTjJune 1998

ParameterSTP45N10Drain-source Voltage (VGS = 0)Drain- gate Voltage (RGS = 20 kΩ)Gate-source VoltageDrain Current (continuous) at Tc = 25 oCDrain Current (continuous) at Tc = 100 oCDrain Current (pulsed)Total Dissipation at Tc = 25 oCDerating FactorInsulation Withstand Voltage (DC)Storage TemperatureMax. Operating Junction Temperature45321801501-65 to 175175100100± 252417180450.32000ValueSTP45N10FIVVVAAAWW/oCVooUnitCC1/10

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STP45N10/FI

THERMAL DATA

TO220Rthj-caseRthj-ambRthc-sinkTlThermal Resistance Junction-case MaxThermal Resistance Junction-ambient MaxThermal Resistance Case-sink TypMaximum Lead Temperature For Soldering Purpose 162.50.5300ISOWATT2203.33oooC/WC/WC/WoCAVALANCHE CHARACTERISTICS

SymbolIAREASParameterAvalanche Current, Repetitive or Not-Repetitive(pulse width limited by Tj max, δ < 1%)Single Pulse Avalanche Energy(starting Tj = 25 oC, ID = IAR, VDD = 25 V)Max Value400UnitAmJELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)OFF

SymbolV(BR)DSSIDSSParameterDrain-sourceBreakdown VoltageTest ConditionsID = 250 µA VGS = 0Min.10010150± 100Typ.Max.UnitVµAµAmAZero Gate VoltageVDS = Max RatingDrain Current (VGS = 0)VDS = Max Rating x 0.8VDS = Max Rating x 0.8 Tc = 125 oCGate-Source LeakageCurrent (VDS = 0)VGS = ± 20 VIGSSON (∗)

SymbolVGS(th)RDS(on)ID(on)ParameterGate ThresholdVoltageStatic Drain-source OnResistanceTest ConditionsVDS = VGS ID = 250 µAVGS = 10 V ID = 22.5 AVGS = 10 V ID = 22.5 A Tc = 100oC45Min.2Typ.30.027Max.40.0350.07UnitVΩΩAOn State Drain CurrentVDS > ID(on) x RDS(on)max VGS = 10 V DYNAMIC

Symbolgfs (∗)CissCossCrssParameterForwardTransconductanceInput CapacitanceOutput CapacitanceReverse TransferCapacitanceTest ConditionsVDS > ID(on) x RDS(on)max ID = 22.5 AVDS = 25 V f = 1 MHz VGS = 0Min.20Typ.4041006001505200800220Max.UnitSpFpFpF2/10元器件交易网www.cecb2b.com

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ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON

Symboltd(on)tr(di/dt)onQgQgsQgdParameterTurn-on TimeRise TimeTurn-on Current SlopeTotal Gate ChargeGate-Source ChargeGate-Drain ChargeTest ConditionsVDD = 50 V ID = 22.5ARG = 4.7 Ω VGS = 10 VVDD = 80 V ID = 45 ARG = 47 Ω VGS = 10 VVDD = 80 V ID =45 A VGS = 10 VMin.Typ.257001202050170Max.35105UnitnsnsA/µsnCnCnCSWITCHING OFF

Symboltr(Voff)tftcParameterOff-voltage Rise TimeFall TimeCross-over TimeTest ConditionsVDD = 80 V ID = 45 ARG = 4.7 Ω VGS = 10 VMin.Typ.303565Max.455095UnitnsnsnsSOURCE DRAIN DIODE

SymbolISDISDM(•)VSD (∗)trrQrrIRRMParameterSource-drain CurrentSource-drain Current(pulsed)Forward On VoltageReverse RecoveryTimeReverse RecoveryChargeReverse RecoveryCurrentISD = 45 A VGS = 0ISD = 45 A di/dt = 100 A/µsVDD = 30 V Tj = 150 oC2000.1414Test ConditionsMin.Typ.Max.451801.5UnitAAVnsµCA(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %(•) Pulse width limited by safe operating area

Safe Operating Area for TO-220Safe Operating Area for ISOWATT220

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Thermal Impedance for TO-220

Thermal Impedance for ISOWATT220

Derating Curve for TO-220Derating Curve for ISOWATT220

Output CharacteristicsTransfer Characteristics

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Transconductance

Static Drain-source On Resistance

Gate Charge vs Gate-source VoltageCapacitance Variations

Normalized Gate Threshold Voltage vsTemperature

Normalized On Resistance vs Temperature

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Turn-on Current Slope

Turn-off Drain-source Voltage Slope

Cross-over TimeSwitching Safe Operating Area

Accidental Overload AreaSource-drain Diode Forward Characteristics

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Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits ForResistive Load

Fig. 4: Gate Charge test Circuit

Fig. 5: Test Circuit For Inductive Load SwitchingAnd Diode Recovery Times

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STP45N10/FI

TO-220 MECHANICAL DATADIM.ACDD1EFF1F2GG1H2L2L4L5L6L7L9DIA.mmMIN.4.401.232.400.490.611.141.144.952.410.013.02.6515.256.23.53.75TYP.MAX.MIN.0.1730.0480.0940.0190.0240.0440.0440.1940.0940.3930.5110.1040.6000.2440.1370.147 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.7 10.40 14.0 2.95 15.75 6.6 3.93 3.85inchTYP.MAX. 0.181 0.051 0.107 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.551 0.116 0.620 0.260 0.1 0.151 1.27 0.050 16.4 0.5ACD1L2F1DG1EDia.L5L7L6L4P011CL98/10F2FGH2元器件交易网www.cecb2b.com

STP45N10/FI

ISOWATT220 MECHANICAL DATADIM.MIN.ABDEFF1F2GG1HL2L3L4L6L7Ø28.69.815.9934.42.52.50.40.751.151.1.952.4101630.610.616.49.33.21.1260.3850.6260.30.118mmTYP.MAX.4.62.72.750.711.71.75.22.710.4MIN.0.1730.0980.0980.0150.0300.0450.0450.1950.0940.3930.6301.2040.4170.50.3660.126inchTYP.MAX.0.1810.1060.1080.0270.0390.0670.0670.2040.1060.409ABL3L6L7¯HF1FDG1EF2123L4P011GL2G9/10元器件交易网www.cecb2b.com

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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license isgranted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication aresubject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics productsare not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics© 1998 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. . 10/10