2SD845资料

Inchange Semiconductor Product Specification

Silicon NPN Power Transistors 2SD845

DESCRIPTION

・With MT-200 package

・Complement to type 2SB755 ・High transition frequency

・High breakdown voltage :VCEO=150V(min)

APPLICATIONS

・For power amplifier applications

PINNING(see Fig.2)

PIN DESCRIPTION 1 2

Base

Collector;connected to mounting base

Fig.1 simplified outline (MT-200) and symbol ・

3 Emitter

Absolute maximum ratings (Ta=25℃)

SYMBOL PARAMETER VCBO VCEO VEBO IC

Collector-base voltage

半电固导体

Collector-emitter voltage Emitter-base voltage Collector current

AHINCS ENG

Open emitter

NOCIMECONDITIONS VALUE UNIT

150 150 5 12 1.2 V V V A A

RODUTOpen base Open collector

IB Base current PC

Collector power dissipation

TC=25℃

120 W 150 -55~150

℃ ℃

Tj Junction temperature Tstg

Storage temperature

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Inchange Semiconductor Product Specification

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL PARAMETER V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE

Collector-emitter breakdown voltageEmitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain

2SD845

CONDITIONS MIN TYP. MAXUNIT

150 5

2.0

V V V

IC=0.1A; IB=0 IE=10mA; IC=0 IC=5 A;IB=0.5 A

IC=5A ; VCE=5V 1.5 V μA VCB=150V; IE=0 -50 μA VEB=5V; IC=0 -50 IC=1A ; VCE=5V

55 160 fT Transition frequency

󰂋 hFE classifications

R O 55-110 80-160

半电固导体IC=1A ; VCE=10V

AHINCS ENGNOCIMERODUT 20 MHz

2

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Inchange Semiconductor Product Specification

Silicon NPN Power Transistors

PACKAGE OUTLINE

2SD845

半电固

导体AHINCS ENGNOCIMERODUTFig.2 Outline dimensions

3