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IC产品可靠度

来源:好走旅游网
󳕹󳕳󰬪󰛜󰌙󱉦󰜓󱔊󰊧󰂼󱑽󰨷󰴶󱑌󰴶󰽥󰉿󰊮󰌡󰛜󱈯󱁾󰌙󱉦󰜓󰚭󱗇󰯅󰨓󰬣󰿜󰠅󱎇󰴹IC󱂡󰳻󰒦󰮔󰙙󰶆󰓉󱁾󰛜󱈯󰸈󱗆󰙙󰊔󱓙󰱤󰘁󰁤󰉛󰡁󰿁IC󰬪󰛜󰌙󱉦󰜓󰊘󰠅󰓋󰉰󰵳󰔸󰵳󰧷󰁦

󰍉󰋖󱔊󰊧IC󰬪󰛜󰝂󱃦󰬟󰿁󰣛󰶜󰙙󱗫󰚷󳕝󰤕󰟔󰏜󱇞(bathtub curve)󰁥

IC󰬪󰛜󰝂󱃦󰬟FIT󰙙󰠇󱁑󰁥IC󰬪󰛜󰌙󱉦󰜓󰙙󰵙󰐟󰋙󰏌

󳕝󰌋󰮺󰲻󰼊󰙙󰬣󱈞󱁾󱅼󰛨󰊿󰋴󰠅󰙙IC󰬪󰛜󰌙󱉦󰜓󰲻󰼊󰶰󰍦󰁦󱜫󰉽󰢕󰿁IC󰬪󰛜󰌙󱉦󰜓󰏞󰉓󱔊󰰊󰙙󱂩󱗆󰁦

󱗫󱒟󰵚󰌙󱉦󰜓(Reliability)󰁩󰤕󰟔󰏜󱇞(bathtub curve)󰁩󰝂󱃦󰬟󰰊󰐗(Failure unIT, FIT)󰁩󰌋󰮺󰲻󰼊

(Accelerated Testing)󰁩󰌋󰮺󰎪󰉿(Acceleration Factor)

󰛃󰔊󰚐󰏋󰔸󰁤IC󰊈󰸸󰊊󰏓󰞉󰒢󰨷󰠠󰠅󰙙󰺾󱏶󰔸󰹕󰁦󰏾IC󰒦󰮔󰙙󰳯󰢝󰒻󰝊󰟉󰠭󰬛󰶆󰁤󰔨󰊔󱓙󱁾󰎋󰶆󰨷󰢕󱐵󰊃󰢨󰵷󰁤󰞟󰐇󰵴󰽀󰁦󰉰󰍟󰗵󰉛󱗳󰿁IC󰙙󰔱󱍠󰋚󰬉󰁤󰎪󰏤󰌒󱊬󱜗󰒦󰮔󰊔󱓙󰲃󰒻󰭚󱇞󱄱󰙙󰸆󰭚󰌋󰊈󰒦󰮔󰳯󰢝󰁦󰩽90󰏋󰋾󰚋󰲂󰙙󰏣󰸆󰏷󰒦󰮔󰁤󰶆󰓉󰕑2000󰏋󰙙0.18󰸆󰏷󰙙󰬉󰏣󰸆󰏷󰒦󰮔󰁦󰊔󰷃󰎯󰠦󱌐󰉪󱐵󰊃50󰠴󰋸󰉪󰁤󰒻󰉽󰰷󰱤󰘁󰉙IC󰙙󰗌󰦐󱁾󱏐󰍜󱇍󱖚󰁦󰎝󰣛󱎇󰴹󰒦󰮔󰙙󰶆󰓉󰁤󰉛󰡁󰿁󰛜󱈯󰙙󰠅󰓋󰍵󰊔󱓙󰙙󰱤󰧷󰁦󰏾󰌙󱉦󰜓󰉦󰞉󰛜󱈯󰙙󰣨󰋐󰁤󰝂󰉛󰡁󰿁IC󰌙󱉦󰜓󰊘󰠅󰓋󰉰󰰱󰵳󰔸󰵳󱘌󰟭󰁦󰾡󰉓󰞉SIA(Semiconductor Industry Association)󰿁IC󰌙󱉦󰜓󰽫󰲻󰙙󰔢󰳻󰺦[1]󰁦󰾡󰊕󱂭󰗼󰋾󰚌IC󰌙󱉦󰜓󰙙󰚗󰲂󰝂󱃦󰬟(Long term failurerate)󰩽90󰏋󰋾󰙙󱅰󰉤FIT(Failure unIT)󰙙󰠅󰓋󰁤󰶆󰓉󰕑󰬤󰊦󱅰FIT󰙙󰠅󰓋󰁦󰽥󰉿󱁾󰒿󰣘󰭋8 󰲂

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IC󰬪󰛜󰝂󱃦󰬟󰿁󰣛󰶜󰙙󱗫󰚷󰍦󰛃󰁤󰸸󰞢󰺾󰩬󰍜󰔸󰵙󰐟IC󰬪󰛜󰌙󱉦󰜓󰙙󰉓󰡈󰜸󱅺󰝊󰝂󱃦󰬟(failurerate)󰁦󰍟󰗵IC󰬪󰛜󰙙󰌙󱉦󰜓󰝊󰜸󰌒󱊬󱜗󰬪󰛜󰎯󱋁󰐪󰉓󰝬󰣛󰶜󰜝󰙙󰏀󰝺󰬟󰂀󰞴󰿁󰗵󰝂󱃦󰬟󰂁󰁤󰏀󰝺󰬟󰸏󰧷󰂀󰑃󰝂󱃦󰬟󰸏󰐭󰂁󰰱󰚌󰍪IC󰬪󰛜󰙙󰌙󱉦󰜓󰸏󰎻󰁦󰾡󰉚󰞉󰭦󰙝IC󰬪󰛜󰊘󰝂󱃦󰬟󰿁󰔴󰍜󰣛󰶜󰊘󱗫󰚷󰾡󰁦󰎽󰾡󰉚󰗔󰍪󰁤IC󰬪󰛜󰎯󰔴󰍜󰚋󰲂󰸶󰕈󰏞󰼰󰧷󰙙󰝂󱃦󰬟󰁤󰐨󱎇󰴹󰣛󰶜󰙙󱄣󰌋󰁤󰝂󱃦󰬟󰸶󰉨󰠥󰂀󰶠󰝬A󰂁󰁤󰏤󰶠󰝬󰉦󱁈󰞉󰏘󰋅󰲂(infancy period)󰁦󰺅󰬪󰛜󰙙󰔴󰍜󰣛󰶜󰵴󰽀󰝔󰉓󰣛󰶜󱓃󰊘󰜝󰁤󰝂󱃦󰬟󰸶󰠥󰐇󰯰󰐭󰂀󰶠󰝬B󰂁󰁤󰏤󰶠󰝬󰉦󱁈󰞉󰌙󰍜󰍛󰕶󰲂(useful life period)󰁦󰎯󰺾󰽀󰌙󰍜󰍛󰕶󰲂󰊘󰜝󰁤IC󰬪󰛜󰙙󰝂󱃦󰬟󰸶󰜢󱒓󰎮󱄣󰌋󰂀󰶠󰝬C󰂁󰁤󰏤󰶠󰝬󰉦󱁈󰞉󰩥󱆖󰲂(wear outperiod)󰁦IC󰬪󰛜󰎯󰔴󰍜󰽀󰳻󰊕󰗔󰺾󱋝󰊘󰏘󰋅󰲂󰁥󰌙󰍜󰍛󰕶󰲂󰋸󰊿󰩥󱆖󰲂󰑃󰒖󰏓󰉓󰕊󰛨󰙙󰤕󰟔󰏜󱇞(Bathtub Curve)󰁦󰌙󱉦󰜓󰊈󰳻󰢪󰑃󰝊󱔟󰍟󰵙󰐟IC󰬪󰛜󰗵󰏘󰋅󰲂󰁥󰌙󰍜󰍛󰕶󰲂󰋸󰊿󰩥󱆖󰲂󰙙󰝂󱃦󰬟󰝊󰑉󰐭󰗵󰬪󰛜󰮝󰣸󰠅󰓋󰁤󰔸󰐺󱓙󰝊󰑉󰌙󰋸󰌈󰮬󰴗󰜄󰋒󰁤󰔨󰍜󰔸󰐪󰞉󰌘󰧰󰊔󰔄󰛜󰊘󰔱󱊽󰁦󰎯󰏘󰋅󰲂󰙙󰝂󱃦󰬟󰉓󰦛󰝊󰋸PPM(Parts Per Million)󰗐󰏵󰊱󰋢󰞉󰰊󰐗󰔸󰚌󰍪󰁦󰎯󰏤󰨜󰶜󰩬󰔈󰙙󰝂󱃦󱋚󰕓󰞉󰮣󰠇󰗐󱂡󰳻󰥹󰯘󰴃󰮿󰏓󰙙󰝂󱃦󰁦󰎯󰏤󰨜󰶜󰝂󱃦󰬟󰿁󰣛󰶜󰙙󱗫󰚷󰉓󰦛󰭌󰎥󰠨󰐬󰊱󰐱(WeibullDistribution)󱅼󰏌󰁦󰎯󰍛󰕶󰲂󰙙󰝂󱃦󰬟󰉓󰦛󰝊󰋸FIT󰞉󰰊󰐗󰔸󰚌󰍪󰁤󰕉󰖛󰻈󰝊󰓊109󰊩󰎁󳕝󰊃󰣛(device-hour)󰗔󰳯󰍛󰙙󰝂󱃦󰡈󱅰󰁦󰎯󰏤󰨜󰶜󰩬󰔈󰙙󰝂󱃦󱋚󰕓󰞉󱎑󰽥󰗳󰽥(ESD)󰁤󰽥󰗌󰽀󰼱(EOS)󰗐󰤃󰊷󱄴󰥹󰯘󰴃󰮿󰏓󰙙󰝂󱃦󰁦󰎯󰏤󰨜󰶜󰙙󰝂󱃦󰬟󰪟󰚐󰩬󱅰󰁤󰕉󰝂󱃦󰬟󰿁󰣛󰶜󰙙󱗫󰚷󰉓󰦛󰭌󰎥󰜸󱅰󰊱󰐱58

󰽥󰉿󱁾󰒿󰣘󰭋8 󰲂

Historical IC Failure Rates

1000IntelAT & T/Lucent)TIF( e100taR 0.25erul0.13iFa m0.10r10 TegnoL1'70'75'80'85'90'9520002005Year

1 FIT = 1 fail in 109 device-hours

󰂷󰾡󰉓󰁣SIA󰿁IC󰌙󱉦󰜓󰽫󰲻󰙙󰔢󰳻󰺦

(λ)ABC󰂷󰾡󰉚󰁣󰤕󰟔󰏜󱇞

(Exponential Distribution)󱅼󰏌󰁦󰎯󰩥󱆖󰲂󰙙󰝂󱃦󰬟󰉓󰦛󰝊󰋸󰏋󰞉󰰊󰐗󰔸󰚌󰍪󰁤󰱷󰽁󰙙󰠅󰓋󰝊󰐇󰋇󰵴󰽀󰉤󰏋󰙙󰾪󰕶󰁦󰔷󰎽󰠅󰓋󰼺󰕑0.1%󰙙󰭝󱌐󰝂󱃦󰬟(Cumulative Distribution Function)󰙙󰾪󰕶󰠅󰵴󰽀󰉤󰏋󰁦󰎯󰏤󰨜󰶜󰩬󰔈󰙙󰝂󱃦󱋚󰕓󰞉󰏼󰊷󰁥󰧗󰊷󰗐󰩥󱆖󰴃󰮿󰏓󰙙󰝂󱃦󰁦󰎯󰏤󰨜󰶜󰝂󱃦󰬟󰿁󰣛󰶜󰙙󱗫󰚷󰉓󰦛󰭌󰎥󰿁󱅰󳕝󰩬󰿒󰊱󰐱(Lognormal Distribution)󱅼󰏌󰁦IC󰬪󰛜󰝂󱃦󰬟󰵙󰐟󰊘󰙛󱓃󰱷󰽁󰎯󰵙󰐟IC󰬪󰛜󰌙󱉦󰜓󰙙󰨜󰨹󰞉󰤕󰟔󰏜󱇞󰙙󰍛󰕶󰲂󰁦󰏤󰉓󰨜󰨹󰞉󰾼󱃧IC󰬪󰛜󰔴󰍜󰙫󰠦󰿁󰙙󰨜󰨹󰁦󰮷󰩬IC󱂡󰮿󰸸󰙫󰸶󰗵IC󰲻󰼊󰽀󰳻󰣛󰔴󰍜󰩥󱏐(Burn-In)󰙙󰋙󰏌󰩚󰏘󰋅󰲂󰤊󰧰󰁦󰏾󰿁󰩥󱆖󰲂󰁤󰎯󰏽󱅇󰬤󰊦󰙙IC󱂡󰮿󰒦󰮔󰊿󰉓󰦛󰔴󰍜󰙫󰍍󰩬󰔴󰍜󰙋󰘱󰉨󰁤󰾼󰊔󰗸󰼺󰕑󰁤󰝂󰮷󰩬󰊔󰤤󰐹󰧀󱈞󰁦󰎯󰛃󰠦󰱤󰽀󰠇󱁑󰍛󰕶󰲂󰝂󱃦󰬟󰙙󰰊󰐗󰝊FIT󰁦󰉓󰦛󰝊󰔴󰍜󰌋󰮺󰲻󰼊󰙙󰋙󰏌󰔸󰓋󰩻IC󰬪󰛜󰎯󰍛󰕶󰲂󰙙󰝂󱃦󰬟󰁦󰋸FIT󰞉󰰊󰐗󰙙󰝂󱃦󰬟(λ)󰠇󱁑󰊮󰏌󰎽󰉨󰗔󰍪󰁪[2],[3]λ(in FIT)= M×109/N×Ts×Af󰕉󰊕M󰚌χ222(r+1)󳕫󳕳󳕼/2󰁦χ2(r+1)󳕫󳕳󳕼󰚌󰏽󱅇󰤤󰖛󰐆󰚦󰨜󰶜(Confidence Level)󰉨󰁤󰿁󱏐2(r+1)󰐆󰍟󰜓(Degrees of freedom)󰙙󰌔󰋤󰊱󰧣󰠽(Chi squared distribution value)󰁦󰕉󰊕󰁤r󰚌󰍪󰎯󰏤󰌋󰮺󰲻󰼊󰉨󰊘󰝂󱃦󰡈󱅰󰁩N󰚌󰍪󰏤󰌋󰮺󰲻󰼊󰔴󰍜󰊘󱅵󰛜󱅰󰁩Ts󰚌󰍪󰏤󰌋󰮺󰲻󰼊󰔴󰍜󰊘󰣛󰶜󰁩Af󰚌󰍪󰏤󰌋󰮺󰲻󰼊󰊘󰌋󰮺󰎪󰉿󰂀󰼉󰔈󰉨󰺷󰊘󰊧󰭗󰂁󰁦󰉓󰦛󰉛󰑩󰋸󰚌󰠦󰉪󰠇󱁑󰩻󰊘FIT󰠽󰊘󰧷󰐭󰁤󰓔󰖛IC󰬪󰛜󰌙󱉦󰜓󰊘󰧷󰐭󰁦󰣿󰊔󰙝FIT󰠽󰙙󰠇󱁑󰬘󰤒󰞟󱄿󰁤󰟰󰊔󰦐󰒁󰎌󰉙󰼆󰌋󰮺󰲻󰼊󰙙󰫢󰎁󰊿󰠇󱁑󰣛󰗔󰔴󰍜󰊘󰨞󱅰󰁤󰏤󰑃󰌙󰦐󰏓󰞉IC󰬪󰛜󰌙󱉦󰜓󰵙󰐟󰊘󰙛󱓃󰁤󰮿󰏓󱍹󱂬󰊘󰴐󱈞󰏾󰊔󰐆󰙝󰁦󱑘󰉓󱔊󰰊󰔷󰉿󰁪󰧿󰮣󰉓󰌋󰮺󰲻󰼊󰴐󰘈󰞉100󰡈󱅵󰛜󰊕󰝂󱃦1󰡈󰁤󰛆󰕉󰾼󱃧󰝂󱃦󰬟󰞉1%󰁦󰟰󰏽󱅇90%󰊘󰐆󰚦󰨜󰶜(Confidence Level)󰛆󰕉󰾼󱃧󰝂󱃦󰬟󰞉3.89%󰁦󰌤󰉓󰌋󰮺󰲻󰼊󰴐󰘈󰞉1000󰡈󱅵󰛜󰊕󰝂󱃦10󰡈󰁤󰛆󰕉󰾼󱃧󰝂󱃦󰬟󰎝󰞉1%󰁦󰟰󰏽󱅇90%󰊘󰐆󰚦󰨜󰶜󰛆󰕉󰾼󱃧󰝂󱃦󰬟󰞉1.5%󰁦󰋸󰉪󰙙󰔷󰉿󰑓󰵡󰒢󰡁󱒱󰳍󰚌󰠦󰉪󰕇󰡈󰌋󰮺󰲻󰼊󰾼󱃧󰝂󱃦󰬟󰎝󰞉1%󰁤󰐨󰎪󰔴󰍜󰙙󱅵󰍉󱅰󰊔󰎝󰁤󰏽󱅇󰐆󰚦󰨜󰶜󰜝󰠇󱁑󰩻󰌈󰙙󰴐󰘈󰰱󰊔󰞴󰎝󰁦󰟰󰒢󰡁󰓚󰏞󰒁󰎌󰉙󰼆󰌋󰮺󰲻󰼊󰙙󰫢󰎁󰁤󰑃󰏞󰌙󰦐󱂩󰞉󰕇󰙫󰝊󰞴󰎝󰙙󰏾󰮿󰏓󱍹󱂬󰊘󰐺󱓙[3]󰁦󰗔󰋸󰟰󰠅󰋢󰼰IC󰬪󰛜󰙙FIT󰠽󰁤󰒢󰡁󰠅󰒁󰎌󰉙󰼆󰌋󰮺󰲻󰼊󰙙󰫢󰎁󰊿󰠇󱁑󰣛󰗔󰔴󰍜󰊘󰨞󱅰󰁤󰎎󰨂󰋢󰼰󰊑󰏞󰸈󰻈󰁦IC󰬪󰛜󰌙󱉦󰜓󰊘󰵙󰐟󰋙󰏌󰞉󰉙󰋸󰯰󰒞󰊿󰯰󰺷󰞲󰏓󰍉󰙙󰋙󰏌󰵙󰐟IC󰬪󰛜󰙙󰌙󱉦󰜓󰁤󰉓󰦛󰑩󰪮󰍜󰌋󰮺󰲻󰼊󰙙󰋙󰘬󰁦󰌋󰮺󰲻󰼊󰙙󰖛󰻈󰞉󰁪󰔴󰍜󰋢IC󰬪󰛜󰍍󰩬󱋁󰐪󰙋󰘱󱘌󰟭󰙙󰫢󰎁󰔸󰶆󰐑󰲻󰼊󰁤󰎽󰏤󰌙󰉽󰰷󱐵󰳵󰲻󰼊󰣛󰶜󰏾󰒞󰮺󰋀󱏐󰝂󱃦󱋚󰕓󰁦󰐨󰌋󰮺󰲻󰼊󰔴󰍜󰙙󰛃󰱤󰞉󰎯󰋸󰌋󰮺󰲻󰼊󰩻󰕑󰙙󰝂󱃦󱋚󰕓󰁤󰍀󰶲󰕱󰍍󰩬󱋁󰐪󰙋󰘱󰩻󰕑󰙙󰝂󱃦󱋚󰕓󰞴󰎝󰁤󰨬󰉓󰙙󰢨󰐹󱏐󰼈󰌥󰏞󰣛󰶜󰙙󰊔󰎝󰁦󰎽󰏤󰊑󰌙󰩂󰐑󰌋󰮺󰲻󰼊󰁤󰑉󰛆󰰱󰌰󰌘󰌋󰮺󰲻󰼊󰙙󰸈󰻈󰁦󰏾󰌋󰮺󰎪󰉿(Acceleration Factor)󰙙󰖛󰻈󰞉󰍍󰩬󰙋󰘱󰉨󰙙󰔴󰍜󰾪󰕶󰧰󰋸󰌋󰮺󰲻󰼊󰉨󰙙󰔴󰍜󰾪󰕶󰙙󰋢󰬟󰁦󰉓󰦛󰩬󰍜󰙙󰌋󰮺󰲻󰼊󰫢󰎁󰋴󰠅󰞉󰉨󰎐󰰻󱁇󰁪󰹝󰜓󰁥󰽥󱏀󰁥󰹛󰜓󰕱󰹝󰜓󱜊󰊷󰁦󰎢󰶰󰊔󰎝󰙙󰌙󱉦󰜓󰲻󰼊󰶰󰍦󰑃󰌙󰦐󰞉󰎢󱁇󰫢󰎁󰊘󰭜󰎥󰁦󰋸󰉨󰊱󰐹󰿁󰊔󰎝󰫢󰎁󰊘󰌋󰮺󰎪󰉿󱅼󰛨󰨂󰉓󰊧󰭗󰁦󰹝󰜓󰙙󰌋󰮺󰎪󰉿󰝊󰍟Arrhenius model[3]󰗔󰪪󱊬󰌈󰔸󰁦󰌙󱄳󰏓󰋸󰉨󰙙󰏌󰉿󰁪TAF=Lnormal/Lstress=exp[(Ea/k)×(1/Tnormal-1/Tstress)],󰕉󰊕󰁤Lnormal󰊿Lstress󰊱󰐹󰚌󰍪󰍍󰩬󰙋󰘱󰉨󰙙󰔴󰍜󰾪󰕶󰊿󰌋󰮺󰲻󰼊󰉨󰙙󰔴󰍜󰾪󰕶󰁦Ea󰚌󰍪󰝺󰊷󰦐󰁤󰰊󰐗󰞉󰽥󰉿󰍿(eV)󰁦k󰚌󰍪Boltzmann’s constant(8.62×10-5eV/K)󰁦Tnormaland Tstress󰊱󰐹󰚌󰍪󰍍󰩬󰙋󰘱󰉨󰙙󰴒󰿁󰹝󰜓󰊿󰌋󰮺󰲻󰼊󰉨󰙙󰴒󰿁󰹝󰜓󰁦󰽥󱏀󰙙󰌋󰮺󰎪󰉿󰝊󰍟Eyring model[3]󰗔󰪪󱊬󰌈󰔸󰁦󰌙󱄳󰏓󰋸󰉨󰙙󰏌󰉿󰁪Vβ(Vstress-Vnormal)AF=10,󰕉󰊕󰁤Vnormal󰊿Vstress󰊱󰐹󰚌󰍪󰍍󰩬󰙋󰽥󰉿󱁾󰒿󰣘󰭋8 󰲂

59

󰘱󰉨󰙙󰔴󰍜󰽥󱏀󰊿󰌋󰮺󰲻󰼊󰉨󰙙󰔴󰍜󰽥󱏀󰁦β󰞉󰽥󱏀󰙙󰌋󰮺󰬟󰩬󱅰󰁦󰉰󰏞󰔬󰉛󰭦󰿕󰔴󰍜󰋸󰐆󰳍󰿁󱅰(exp)󰞉󰖵󰙙󰛨󰏌󰁦󰕉󰾼󰝊󰕱󰋸10󰞉󰖵󰙙󰛨󰏌󰞴󰎝󰁤󰌥󰝊󰏤󰣛󰕇󰙫󰙙β󰠽󰊔󰎝󰏾󰊊󰁦󰹛󰜓󰙙󰌋󰮺󰎪󰉿󰝊󰍟Hallberg󰕱Peck[3]󰗔󰪪󱊬󰌈󰔸󰁦󰌙󱄳󰏓󰋸󰉨󰙙󰏌󰉿󰁪HAF=(RHstress/RHnormal)nwith n=2~3,󰕉󰊕󰁤RHnormal󰊿RHstress󰊱󰐹󰚌󰍪󰍍󰩬󰙋󰘱󰉨󰙙󰔴󰍜󰹛󰜓󰊿󰌋󰮺󰲻󰼊󰉨󰙙󰔴󰍜󰹛󰜓󰁦n󰞉󰹛󰜓󰙙󰌋󰮺󰬟󰩬󱅰󰁤󰉓󰦛󰿁󱏐󰊔󰎝󰙙󰝂󱃦󱋚󰕓󰁤󰊧󰗵2~3󰊘󰶜󰁦󰹝󰜓󱜊󰊷󰙙󰌋󰮺󰎪󰉿󰝊󰍟Coffin-Mason equation [3]󰗔󰪪󱊬󰌈󰔸󰁦󰌙󱄳󰏓󰋸󰉨󰙙󰏌󰉿󳕪TEAF=(∆Tstress/∆Tnormal)nwith n󰃝4~8,󰕉󰊕󰁤∆Tnormal󰊿∆Tstress󰊱󰐹󰚌󰍪󰍍󰩬󰙋󰘱󰉨󰙙󰹝󰜓󱜊󰊷󰊿󰌋󰮺󰲻󰼊󰉨󰙙󰹝󰜓󱜊󰊷󰁦n󰞉󰹝󰜓󱜊󰊷󰙙󰌋󰮺󰬟󰩬󱅰󰁤󰉓󰦛󰿁󱏐󰊔󰎝󰙙󰝂󱃦󱋚󰕓󰁤󰊧󰗵4~8󰊘󰶜󰁦IC󰬪󰛜󰌙󱉦󰜓󰊘󰲻󰼊󰶰󰍦󰠯󰎋󰎯󰶆󰐑󳕹󳕳󰬪󰛜󰌙󱉦󰜓󰲻󰼊󰊘󰛃󰁤󰍀󰎋󰒁󰏓󰊩󰎁(Device-level)󰙙󰌙󱉦󰜓󰲻󰼊󰁦󰎽󰊧󰽥󱄴󰩥󱆖󰲻󰼊TDDB(Time-Dependent Dielectric Breakdown)󰁥󱆠󰼱󰉿󰘡󰉝󰲻󰼊HCI(Hot Carrier Injection)󰊿󰽥󰉿󱉋󰭅󰲻󰼊EM(Electro Migration)󰴃󰴃󰁦󰎯󰊩󰎁󰙙󰌙󱉦󰜓󰮷󰽀󰠅󰓋󰜝󰁤󰊑󰌙󰋸󰍍󰏌󰍛󰬪IC󰬪󰛜󰁤󰎎󰶆󰐑IC󰬪󰛜󰙙󰌙󱉦󰜓󰲻󰼊󰁦󰉓󰦛IC󰬪󰛜󰙙󰌙󱉦󰜓󰲻󰼊󰶰󰍦󰉤󰊱󱄿󰘹󰁤󰋸󰉨󰩚󰋴󰠅󰶰󰍦󰨂󰉓󱔊󰊧󰌍󰑞󰁪EFT󰁥HTOL󰁥THB󰁥HTSL󰁥TCT󰁥TST󰁥PCT󰁥ESD󰁥LatchUp󰁥SER󰁥60󰽥󰉿󱁾󰒿󰣘󰭋8 󰲂Endurance cycling test󰊿Data retentiontest󰁦1. EFT(Early Fail Test)󰏘󰋅󰬪󰛜󰲻󰼊󰁪󰏤󰲻󰼊󰍦󰙙󰎯󰐻󰍜󰧷󰹝󰊿󰧷󰽥󱏀󰌋󰮺󰲻󰼊󰔸󰒬󰌈󰏘󰋅󰊘󰝂󱃦󰬪󰛜󰁤󰶆󰏾󰵙󰐟IC󰬪󰛜󰙙󰏘󰋅󰋢󰬟󰁦󰎯󰲻󰼊󰊕󰌋󰉝IC󰙙󰧃󰻮󰞉󰨗󰿒󰙙󰧃󰻮󰏾󰚢󱎑󰿒󰊘󰨋󱏀󰁦2. HTOL(High Temperature OperatingLife Test)󰧷󰹝󱋁󰐪󰾪󰕶󰲻󰼊󰁪󰏤󰲻󰼊󰍦󰙙󰎯󰐻󰍜󰧷󰹝󰊿󰽥󱏀󰌋󰮺󰲻󰼊󰁤󰔸󰵙󰐟IC󰬪󰛜󰙙󰚗󰣛󰶜󰙙󱋁󰐪󰾪󰕶󰁦󰎯󰲻󰼊󰊕󰌋󰉝IC󰙙󰧃󰻮󰞉󰨗󰿒󰙙󰧃󰻮󰏾󰚢󱎑󰿒󰊘󰨋󱏀󰁦3. THB(Temperature Humidity BiasTest)󰹝󰹛󰜓󰨋󱏀󰲻󰼊󰁪󰏤󰲻󰼊󰍦󰙙󰎯󰐻󰍜󰧷󰹝󰹛󰜓󰊿󰕸󰖛󰨋󱏀󰌋󰮺󰲻󰼊󰔸󰵙󰐟IC󰬪󰛜󰿁󰹛󰤂󰙙󰗪󰒤󰦐󰉢󰁦󰎪󰗔󰌋󰙙󰹝󰹛󰜓󰞉85°C󰁤85%󰞴󰿁󰹛󰜓󰁤󰝂󰉓󰦛󰍵󱁈󰞉85/85󰲻󰼊󰁦󰏤󰣛󰌋󰉝IC󰙙󰧃󰻮󰞉󱎑󰿒󰊘󰨋󱏀󰏾󰚢󰨗󰿒󰙙󰧃󰻮󰁦4. HTSL(High Temperature StorageLife Test)󰧷󰹝󱎷󰏀󰾪󰕶󰲻󰼊󰁪󰏤󰲻󰼊󰍦󰙙󰎯󰐻󰍜󰧷󰹝󰌋󰮺󰲻󰼊󰔸󰵙󰐟IC󰬪󰛜󰙙󱎷󰏀󰾪󰕶󰁦󰏤󰣛󰊔󰌋󰎂󰐞󰽥󰤂󰙙󰧃󰻮󰕑IC󰬪󰛜󰉪󰁦5. TCT(Temperature Cycling Test)󰹝󰜓󰱃󱐑󰲻󰼊󰁪󰏤󰲻󰼊󰍦󰙙󰎯󰐻󰍜󰧷󰹝󰐭󰹝󰱃󱐑󱜊󰊷󰲻󰼊󰁤󰔸󰵙󰐟IC󰬪󰛜󰿁󰹝󰜓󱜊󰊷󰙙󰗪󰒤󰦐󰉢󰁦󰋴󰠅󰝊󱔟󰏤󰧷󰹝󰐭󰹝󰱃󱐑󱜊󰊷󰁤󰔸󰲻󰼊IC󰬪󰛜󰉪󰎢󱄴󰊔󰎝󰙊󱈯󰊘󱆠󱌱󰴦󰚷󱅰󰊔󰎝󰁤󰏾󰌙󰦐󰋏󰧎󰊘󰝂󱃦󱋚󰕓󰁦󰎯󰏤󰲻󰼊󰊕󰎪󰗔󰍜󰊘󰹝󰜓󰊧󱈯󰞉󰤂󰞴󰁤󰝂󰉓󰦛󰍵󱁈󰞉air to air󰲻󰼊󰁦6. TST(Thermal Shock Test)󰐸󱆠󱈋󱏘󰲻󰼊󰁪󰏤󰲻󰼊󰍦󰙙󰎯󰐻󰍜󰐸󱆠󱐛󰶜󱜊󰊷󰲻󰼊󰔸󰵙󰐟IC󰬪󰛜󰿁󰹝󰜓󱐛󰶜󱜊󰊷󰙙󰗪󰒤󰦐󰉢󰁦󰏤󰲻󰼊󰍦󰙙󰕱TCT󱗳󰐧󰁦󰎪󰏤󰲻󰼊󰊕󰗔󰍜󰊘󰹝󰜓󰊧󱈯󰞉󰫰󰞴󰁤󰝂󰉓󰦛󰍵󱁈󰞉liquid to liquid󰲻󰼊󰁦7. PCT(Pressure Cooker Test)󱏀󰉢󱒢󰲻󰼊󰁪󰏤󰲻󰼊󰍦󰙙󰎯󰐻󰍜󰧷󰹝󰹛󰜓󰊿󰌋󰩶󰙙󰉽󰤂󱏀󰉢󰲻󰼊󰔸󰵙󰐟IC󰬪󰛜󰿁󰹛󰤂󰙙󰗪󰒤󰦐󰉢󰁦󰕉󰕱THB󰲻󰼊󰊘󰊔󰎝󰮈󰞉󰊔󰌋󰨋󱏀󰁤󰋲󰍜󰼰󰧷󰙙󰹝󰜓(121°C)󰊿󰼰󰧷󰙙󰹛󰜓(100%R.H.)󰁦8. ESD(Electro Static Discharge Test)󱎑󰽥󰗳󰽥󰲻󰼊󰁪󰏤󰲻󰼊󰍦󰙙󰎯󰵙󰐟IC󰬪󰛜󰿁󱎑󰽥󰗳󰽥󰙙󰗪󰒤󰦐󰉢󰁦󰏤󰲻󰼊󰏞󰉧󱁇󱅼󰏌󰁤󰊱󰐹󰞉󰉛󱜗󰗳󰽥󱅼󰏌HBM(Human Body Model)󰁥󱋚󱊜󰗳󰽥󱅼󰏌MM(Machine Model)󰊿󰩭󰽥󰊩󰎁󰗳󰽥󱅼󰏌CDM(Charge DeviceModel)󰁦HBM󰊿MM󰊱󰐹󱅼󱏝󰉛󱜗󰊿󱋚󱊜󰿁IC󰬪󰛜󰗳󰽥󰙙󰪋󰒖󰁤󰏾CDM󰛆󰝊󱅼󱏝󰩭󰽥󰬪󰛜󰿁󰎮󰗳󰽥󰙙󰪋󰒖󰁦9. Latch Up󱕁󰣼󰲻󰼊󰁪󰏤󰲻󰼊󰍦󰙙󰎯󰵙󰐟IC󰬪󰛜󰿁Latch Up󱕁󰣼󰙙󰗪󰒤󰦐󰉢󰁦󰏤󰲻󰼊󰋴󰠅󰝊󰧦󰿁CMOS󰬪󰛜󰊑󰏞󰙙󰲻󰼊󰁦10. SER(Soft Error Rate Test)󰮴󰗌󰝂󱃦󰬟󰲻󰼊󰁪󰏤󰲻󰼊󰍦󰙙󰎯󰵙󰐟IC󰬪󰛜󰿁α󰭐󰉿󰗔󰋏󰧎󰙙󰮴󰗌󰝂󱃦(Soft Error)󰙙󰗪󰒤󰦐󰉢󰁦󰏤󰲻󰼊󰋴󰠅󰝊󰧦󰿁DRAM󰊿SRAM󰬪󰛜󰊑󰏞󰙙󰲻󰼊󰁦11. Endurance Cycling Test󰠠󱈍󰗛󱄳󰲻󰼊󰁪󰏤󰲻󰼊󰍦󰙙󰎯󰵙󰐟󰚢󰱨󰳯󰗌󰦾󱊳IC󰬪󰛜󰺾󰠠󱈍󰗛󱄳󰙙󰟗󰉮󰦐󰉢󰁦󰏤󰲻󰼊󰋴󰠅󰝊󰧦󰿁󰚢󰱨󰳯󰗌󰦾󱊳IC󰬪󰛜󰊑󰏞󰙙󰲻󰼊󰁦12. Data Retention Test󰼟󰣘󱁪󰜵󰉢󰲻󰼊󰁪󰏤󰲻󰼊󰍦󰙙󰎯󰵙󰐟󰚢󰱨󰳯󰗌󰦾󱊳IC󰬪󰛜󰺾󰧷󰹝󰌋󰮺󰜝󰙙󰼟󰣘󱁪󰜵󰙙󰦐󰉢󰁦󰏤󰲻󰼊󰋴󰠅󰝊󰧦󰿁󰚢󰱨󰳯󰗌󰦾󱊳IC󰬪󰛜󰊑󰏞󰙙󰲻󰼊󰁦󰋸󰉪󰗔󰊧󰭗󰊘󰎢󰶰󰲻󰼊󰊘󰳻󰒏󱁾󰋙󰘬󰑩󰏞󰨷󱃧󱅺󰹟󰮝󱇍󰌙󰨞󰏽[5~30]󰁦󰞫󰞉󰸸󰞢󰩬󰍜󰊘IC󰬪󰛜󰌙󱉦󰜓󰶰󰍦󰁦IC󰬪󰛜󰌙󱉦󰜓󰊘󰒷󰶆󰉓󰦛󰬪󰛜󰙙󰌙󱉦󰜓󰏽󰶎󰑩󰎯󰮣󰠇󰞼󰳯󰊿󱂡󰳻󰣛󰰱󱏐󰶆󰐑󰁤IC󰬪󰛜󰍵󰊔󰔷󰌮󰁦󰉓󰦛󰋖󱘠󰉪󰱤󰊿󰙙IC󰬪󰛜󰌙󱉦󰜓󰒷󰶆󰋙󰏌󰏞󰉨󰎐󰰻󱁇󰋙󰘬󰁪1.BIR(Built-In Reliability)2.WLR(Wafer Level Reliability)3.QML (Qualified Manufacturing Line)4.POF(Physics of Failure)[31]Hu [32]󰖛󰻈BIR󰝊󰉓󱁇󰊔󰷃󰩽󰍛󰬪󰒁󰏓󰜝󰌘󰵙󰐟󰍛󰬪󰴐󰘈󰁤󰍵󰩽󰞼󰳯󰮣󰠇󰊿󰍛󰬪󰽀󰳻󰊕󰪛󰕓󰸶󱅂󱚤󰌙󱉦󰜓󰙙󱜊󱅰󰁤󰶆󰏾󰼺󰕑󰯰󰔳󰌙󱉦󰜓󰙙󰋙󰘬󰁦󰏤󰘬󰐻󰍜󰎯󰬪󰛜󰮣󰠇󱂡󰮿󰙙󰚋󰓉󰶠󰝬󰰱󰿁󰬪󰛜󰌙󱉦󰜓󰶆󰐑󰼉󰭚󰙙󰵙󰐟󰁤󰩚󰌙󱉦󰜓󰙙󱃪󰓋󰮣󰠇󰉝󰬪󰛜󰊕󰁤󰔴󰦐󱊋󰏘󰳯󰬤󰨪󱕚󱓃󰊿󰏘󱍑󰓋󰿁󰴄󰁤󰋸󰐵󰎯󰜝󰲂󰏓󰛜󰣛󰁤󰦃󰵬󰒻󰎵󰙙󰏓󰍉󰗵󰻾󰪹󰪣󰝄󰉪󰁦󰉨󰎐󰝊󰉓󰔬󰩬󰍜󰗵BIR󰙙󰊈󰕈󰎽SPC(Statistical Process Control)󰁤B/I(Burn-In)󰁤In-Line Testing󰊿󰽥󰼩󰌙󱉦󰜓󱅼󱏝󰴃󰴃󰁦WLR󰛆󰝊󰉓󱁇󰐻󰍜Wafer level󰋙󰏌󰶆󰐑󰒞󰮺󰊘󰌋󰮺󰲻󰼊󰍜󰔸󰵙󰐟󱅂󱚤󰌙󱉦󰜓󱜊󰬮󰔸󰹕󰙙󰋙󰘬[33]󰁦󰌴󰌙󰺷󰞲󰲻󰼊󰣛󰶜󰊿󰜆󰼀󰵬󰍜󰁤󰝊󰩚󰔸󰌙󱉦󰜓󰲻󰼊󰙙󱒈󰷐󰁦QML[34]󰛆󰝊󰒷󱜊󰬪󰛜󱜕󱗇󰙙󱝈󰗂󰁤󰏾󰏓󰞉󰍛󰬪󱇞󰎋󰺾󰽀󱜕󱗇󰎎󰍛󰬪󰙙󱝈󰗂󰁦󰍛󰬪󱇞󰎋󰺾󰽀󰤤󰖛Test Circuit󱜕󱗇󰮷󰽀󰜝󰁤󰊑󰦐󰚭󱗇󰍛󰬪󰙙󰛜󱈯󰊿󰌙󱉦󰜓󰁦󰏾POF󰛆󰝊󰐻󰍜󰒁󰎌󰉙󰼆󰝂󱃦󱋚󰕓󰙙󰋙󰏌󰁤󰶆󰏾󰱤󰛃󰽫󰔣󰝂󱃦󰙙󰳯󰍛󰁤󰩽󰏾󰒷󰶆󰬪󰛜󰙙󰛜󱈯󰊿󰌙󱉦󰜓[35]󰁦󰽥󰉿󱁾󰒿󰣘󰭋8 󰲂61󰴐󱈞󰬺󰗔󰞫󰙝󰁤󰌙󱉦󰜓󰜸󰙙󰝊󰬪󰛜󰔴󰍜󰲂󰶜󰙙󰛜󱈯󰁦󰮵󰉰󰝊󱂭󰧰󰉙󰽧󰥹󱓃󰙙󰛜󱈯󰌮󰁤󰯇󰝊󱙮󰗵󰌙󱉦󰜓󰙙󱇍󰰖󰁦󰗼󰍣󰉙󰮵󰉓󱓃󰁤󰒢󰡁󰌙󰋸󰞶󰌈󰌙󱉦󰜓󰝊󰩽󰬪󰛜󰉓󰶚󰖐󰔴󰍜󰰱󰸶󰠃󰍛󰁤󰌙󱉦󰜓󰉰󰰱󰕱󰜄󰋒󱀐󰸈󰜓󰢹󰢹󰞴󱗫󰁦󰿁IC󰬪󰛜󰠅󰨂󰕑󰜄󰋒󱀐󰸈󰙙󰌙󱉦󰜓󰁤󰧛󰍉󰹑󰹕󱒔󰝊󰠅󰩽󰬪󰛜󰙙󰮣󰠇󰊿󱂡󰮿󰚋󰲂󰰱󰠅󱊬󰉝󰁦󰉰󰰱󰝊󱂭󰁤󰎯󰧛󰓋IC󰬪󰛜󰧷󰌙󱉦󰜓󰙙󱁍󰬣󰉪󰁤󰎯󱊬󰉝󰬪󰛜󰙙󰬣󰗂󰣛󰰱󰶚󰖐󰁤󰏾󰋸󰜄󰋒󰙙󱀐󰸈󰞉󰔱󱓥󰁦󰐻󰍜󰎢󱁇󰒷󰴛󰌙󱉦󰜓󰙙󰋙󰘬󰁥󰌙󱉦󰜓󰊈󰳻󰙙󰒦󰌷󰊿󱏐󰍜󰒦󰮔󰴃󰞴󰊝󰴐󰎥󰼶󰍜󰁤󰔴󱋆󰡈IC󰬪󰛜󰌙󱉦󰜓󱌲󰗵󰒁󰴛󰁦󰨞󰏽󰼟󰣘1.SIA (Semiconductor Industry Association)reliability road map.2.Accelerated Testing Handbook, D.S. Peck andO.D. Trapp.3.Applied Reliability second edition, Tobiasand Trindade.4.Paul Syndergaard,󰂩Having Fits OverFITS󰂩, 2000 Cahners Business Information.5.MIL-STD-883D, METHOD 1015.9.6.EIAJ ED-4701, METHOD D-101.7.JESD22-A108-A.8.MIL-STD-883D, METHOD 1005.8.9.EIAJ ED-4701, METHOD B-122.10.EIAJ ED-4701, METHOD B-123.11.EIAJ ED-4701, METHOD B-131.12.JESD22-A104-A.13.MIL-STD-883D, METHOD 1010.7.14.EIAJ ED-4701, METHOD B-141.15.MIL-STD-883D, METHOD 1011.9.16.JESD22-A102-B.62󰽥󰉿󱁾󰒿󰣘󰭋8 󰲂

17.EIAJ ED-4701, METHOD B-111.18.MIL-STD-883D, METHOD 1008.2.19.EIAJ ED-4701-1 C-113.20.JESD17.21.JESD78.22.EIAJ ED-4701, METHOD C-111.23.EIAJ ED-4701-1, METHOD C-111A.24.ANSI/ESD-S5.2-1994.25.ANSI/EOS/ESD-S5.1-1993.26.ESD DS5.3.1.27.JESD22-C101.28.JESD22-A114-A.29.JESDS22-A115-A.30.MIL-S-19500.31.Way Kuo, Taeho Kim, 󰂨An overview ofmanufacturing yield and reliability modelingfor semiconductor products.󰂩, Proc. of theIEEE Vol.87, no.8.1999.32.C. Hu, 󰂨Future CMOS scaling andreliability󰂩, Proc. IEEE, vol.81,pp.682-689,May 1993.33.J.A. Schideler, T. Turner, J. Reedholm, and C.Messck, 󰂨A systematic approach to waferlevel reliability󰂩, Solid state Technol.,vol.38, no.3, p.47 Mar.1995.34.J.M. Soden and R.E. Anderson, 󰂨IC failureanalysis: Techniques and tools for quality andreliabilty improvement󰂩, Proc. IEEE, vol.81,pp.703-715, May 1993.35.B. Schlund, C. Messick, J. Suehle, and P.Chaparala, 󰂨A new physics-based model fortime-dependent-dielectric-breakdown󰂩, inIntegrated Reliability Workshop, Final Rep.Int., 1995,pp.72-80.

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