5082-3379资料

Features

•Low Harmonic Distortion•Large Dynamic Range•Low Series Resistance•Low Capacitance

Description/Applications

These general purpose switchingdiodes are intended for lowpower switching applicationssuch as RF duplexers, antennaswitching matrices, digital phaseshifters, and time multiplexfilters. The 5082-3188 isoptimized for VHF/UHFbandswitching.

1N5719, 1N5767,

5082-3001, 5082-3039,5082-3077, 5082-3080/81,5082-3188, 5082-3379

The RF resistance of a PIN diode0.41 (.016)is a function of the current0.36 (.014)flowing in the diode. Thesecurrent controlled resistors arespecified for use in control

25.4 (1.00)MIN.applications such as variable RF1.93 (.076)attenuators, automatic gain

1.73 (.068)control circuits, RF modulators,electrically tuned filters, analogphase shifters, and RF limiters.4.32 (.170)3.81 (.150)Outline 15 diodes are available onCATHODEtape and reel. The tape and reelspecification is patterned afterRS-296-D.

25.4 (1.00)MIN.DIMENSIONS IN MILLIMETERS AND (INCHES).Outline 15

Maximum Ratings

Junction Operating and

Storage Temperature Range................................................-65°C to +150°CPower Dissipation 25°C.....................................................................250 mW(Derate linearly to zero at 150°C)

Peak Inverse Voltage (PIV)........................................................same as VBRMaximum Soldering Temperature.......................................260°C for 5 sec

2

MechanicalSpecifications

The Agilent Outline 15 packagehas a glass hermetic seal withdumet leads. The lead finish is 95-5 tin-lead (SnPb) for all PIN

diodes. The leads on the Outline15 package should be restrictedso that the bend starts at least 1/16 inch (1.6mm) from the glassbody. Typical package inductanceand capacitance are 2.5 nH and

0.13pF, respectively. Marking isby digital coding with a cathodeband.

General Purpose Diodes

Electrical Specifications at TA = 25°C

PartNumber5082-MaximumTotalCapacitanceCT (pF)MinimumBreakdownVoltageVBR (V)MaximumResidual SeriesResistanceRS (Ω)1.01.251.251.50.6**IF =100 mA*IF = 20 mA**IF = 10 mAf = 100 MHzEffective CarrierReverse RecoveryLifetimeTimeτ (ns)trr (ns)100 (min.)100 (min.)100 (min.)100 (min.)70 (typ.)*IF = 50 mAIR = 250 mA*IF = 10 mA*IR = 6 mA100 (typ.)100 (typ.)100 (typ.)100 (typ)12 (typ.)IF = 20 mAVR = 10 V90% RecoveryGeneral Purpose Switching and Attenuating30010.2520030390.251501N5719 0.3**15030770.3200Band Switching31881.0*35TestVR = 50 VVR = VBRConditions*VR = 20 V Measure**VR = 100 VIR ≤ 10 µAf = 1 MHzNotes:

Typical CW power switching capability for a shunt switch in a 50 Ω system is 2.5 W.

RF Current Controlled Resistor DiodesElectrical Specifications at TA = 25°C

Max.High

EffectiveMin.ResidualMax.ResistanceCarrierBreakdownSeriesTotalLimit, RH (W)LifetimeVoltageResistanceCapacitancet (ns)VBR (V)RS (Ω)CT (pF) Min. Max.1300 (typ.)1002.50.4 1000 1300 (typ.)1002.50.4 1000 1300 (typ.)500.42500 (typ.)1003.50.41500

Low

ResistanceLimit, RL (W)Min. Max.

8** 8** 8** 8**Max.Difference

in

Resistancevs. BiasSlope, Dc

PartNumber5082-30801N5767*5082-33795082-3081

TestIF = 50 mAVR = VBR,IF = 100 mAConditionsIR = 250 mAMeasuref = 100 MHz

IR ≤ 10 µA

VR = 50 Vf = 1 MHzIF = 0.01 mAf = 100 MHz

IF = 1.0 mABatchIF = 20 mA**Matched atf = 100 MHzIF = 0.01 mA

and 1.0 mAf = 100 MHz

*The 1N5767 has the additional specifications:

τ = 1.0 msec minimum

IR = 1 µA maximum at VR = 50 VVF = 1 V maximum at IF = 100 mA.

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Typical Parameters at TA = 25°C (unless otherwise noted)

1005082-3001, 3039,)3077, 3080AmIN5719( T10NERRUC D1R125°CA25°CWR–60°COF0.1 – FI0.0100.20.40.60.81.01.2VF – FORWARD VOLTAGE (V)Figure 1. Forward Current vs. Forward Voltage.1.0)Fp( ECNAT.5ICAPA5082-3039 CIN57195082-30010010203040506070REVERSE VOLTAGE (V)Figure 4. Typical Capacitance vs. Reverse Voltage.010 dB Bridged Tee Attenuator40 dB mV Output Levels)BOne Input Frequency Fixed 100 MHzd20( REDRO40 TSR5082-3080IF605082-3379 WOLEB805082-308110001020304050607080FREQUENCY (MHz)Figure 7. Typical Second Order Intermodulation Distortion.10,000100,000)S1000)S10,000M5082-3001 MHHO5082-3039 O(( E1005082-3077 E1000CIN5719CNN5082-3081AATS10TS100IISSEERR F1F105082-3080RR5082-33790.110.0010.010.11101000.0010.010.1110100IF – FORWARD BIAS CURRENT (mA)IF – FORWARD BIAS CURRENT (mA)Figure 2. Typical RF Resistance vs. Figure 3. Typical RF Resistance vs. Forward Bias Current.Forward Bias Current.2.510005082-3001)sn30392.0( 3077E)MIN5719FIpT( EYC1.5RNEAVTO100ICVCR = 5VA1.0ERP5082-3188 EVR = 10VACSR.5EVR = 20V5082-3080V5082-3081ER05082-3379100102030405060700102030REVERSE VOLTAGE (V)FORWARD CURRENT (mA)Figure 5. Typical Capacitance vs. Figure 6. Typical Reverse Recovery Time Reverse Voltage.vs. Forward Current for Various Reverse Driving Voltages.10PIN Diode Cross Modulation)2010 dB Bridged Tee AttenuatorBUnmodulated Frequency 100 MHzd( R30E100% Modulation 15 kHzDRO4040 dB mV Output Levels TSR50IF5082-3080 WO605082-3379LEB705082-30818001020304050607080MODULATED FREQUENCY (MHz)Figure 8. Typical Cross Intermodulation Distortion.Diode Package Marking

1N5xxx5082-xxxx would be marked:1NxxxxxxxxYWWYWW

where xxxx are the last four digits of the 1Nxxxx or the 5082-xxxx partnumber. Y is the last digit of the calendar year. WW is the work week ofmanufacture.

Examples of diodes manufactured during workweek45 of 1999:1N57125082-3080 would be marked:1N53071280945945

www.semiconductor.agilent.com

Data subject to change.

Copyright © 2000 Agilent TechnologiesObsoletes 5967-5812E5968-7182E (1/00)